Circuit arrangement with a rectifier circuit

ABSTRACT

A rectifier circuit includes first and second load terminals, a first semiconductor device having a load path and configured to receive a drive signal, and a plurality of second semiconductor devices each having a load path and each configured to receive a drive signal. The load paths of the second semiconductor devices are connected in series, and connected in series to the load path of the first semiconductor device. A series circuit with the first semiconductor device and the second semiconductor devices is connected between the load terminals. Each of the second semiconductor devices is configured to receive as a drive voltage either a load-path voltage of at least one of the second semiconductor devices, or a load-path of at least the first semiconductor device. The first semiconductor device is configured to receive as a drive voltage a load-path-voltage of at least one of the second semiconductor devices.

PRIORITY CLAIM

This application is a Continuation U.S. patent application Ser. No.13/834,700, filed on 15 Mar. 2013, which in turn is aContinuation-In-Part (CIP) of U.S. patent application Ser. No.13/546,510, filed on 11 Jul. 2012, the content of both applicationsincorporated herein by reference in their entirety.

TECHNICAL FIELD

Embodiments of the present invention relate to a circuit arrangementwith a rectifier.

BACKGROUND

Rectifiers are electronic circuits or electronic devices that allow acurrent to flow in a first direction, while preventing a current to flowin an opposite second direction. Such rectifiers are widely used in avariety of electronic circuits in automotive, industrial and consumerapplications, in particular in power conversion and drive applications.

Conventional rectifiers can be implemented with a diode that conducts acurrent when forward biased and that blocks when reverse biased. Adiode, however, causes relatively high losses when forward biased. Theselosses are proportional to the current through the diode. In particularin power conversion application or power supply applications in whichhigh current may flow through the rectifier, significant losses mayoccur. Further, due to reverse recovery effects, a diode (power diode)used in power conversion or drive applications does not immediatelyblock when it changes from the forward biased state to the reversebiased state, so that there may be a time period in which a currentflows in the reverse direction.

A rectifier can also be implemented with a MOSFET (power MOSFET) andsuitable drive circuit for the MOSFET. A conventional power MOSFETincludes an integrated diode, known as body diode, that is effectivebetween a drain terminal and a source terminal of the MOSFET. By virtueof this diode a MOSFET always conducts a current when a voltage isapplied between the drain and source terminals that reverse biases theMOSFET. In an n-type MOSFET (p-type MOSFET), a voltage reverse biasingthe MOSFET is a positive source-drain voltage (negative source-drainvoltage). The drive circuit switches the MOSFET on each time the MOSFETis reverse biased. The losses occurring in a MOSFET in the on-state arelower than losses occurring in a diode under similar operatingconditions. However, power MOSFETs, that may be used in rectifiers, indrive applications or an power conversion applications, may have asignificant output capacitance that needs to be charged/discharged eachtime the MOSFET is switched on/off. This capacitance causes switchinglosses and switching delays.

There is therefore a general need to provide a circuit arrangement witha rectifier circuit having reduced losses.

SUMMARY

A first embodiment relates to a circuit arrangement including arectifier circuit. The rectifier circuit includes a first and a secondload terminal, a first semiconductor device having a load path and acontrol terminal, and a plurality of second semiconductor devices, eachhaving a load path between a first load terminal and a second loadterminal and a control terminal. The second semiconductor devices havetheir load paths connected in series and connected in series to the loadpath of the first semiconductor device, and the series circuit with thefirst semiconductor device and the second semiconductor devices isconnected between the load terminals of the rectifier circuit, and oneof the second semiconductor devices has its control terminal connectedto one of the load terminals of the first semiconductor device, andwherein second semiconductor devices other than the one secondsemiconductor device each have their control terminal connected to aload terminal of one second semiconductor device.

A second embodiment relates to a rectifier circuit. The rectifiercircuit includes a first and a second load terminal, a firstsemiconductor device having a load path and configured to receive adrive signal, and a plurality of second semiconductor devices eachhaving a load path and each configured to receive a drive signal. Thesecond semiconductor devices have their load paths connected in seriesand connected in series to the load path of the first semiconductordevice, and the series circuit with the first semiconductor device andthe second semiconductor devices is connected between the loadterminals. Each of the second semiconductor devices is configured toreceive as a drive voltage either a load-path voltage of at least onesecond semiconductor, or a load-path voltage of at least the firstsemiconductor device, and the first semiconductor device is configuredto receive as a drive voltage a load-path-voltage of at least one of theplurality of second semiconductor devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples will now be explained with reference to the drawings. Thedrawings serve to illustrate the basic principle, so that only aspectsnecessary for understanding the basic principle are illustrated. Thedrawings are not to scale. In the drawings the same reference charactersdenote like features.

FIG. 1 schematically illustrates a circuit arrangement with a rectifiercircuit;

FIG. 2 illustrates a first embodiment of a rectifier circuit including aseries circuit with a first semiconductor device and a plurality ofsecond semiconductor devices connected in series;

FIG. 3 illustrates a second embodiment of a rectifier circuit includinga series circuit with a first semiconductor device and a plurality ofsecond semiconductor devices connected in series;

FIG. 4 illustrates a third embodiment of a rectifier circuit including aseries circuit with a first semiconductor device and a plurality ofsecond semiconductor devices connected in series;

FIG. 5 illustrates an embodiment of a rectifier circuit including adetection circuit and a control drive circuit;

FIG. 6 illustrates the rectifier circuit of FIG. 5 and an embodiment ofthe control and drive circuit in detail;

FIG. 7 that includes FIGS. 7A and 7B illustrates embodiments of thedetection circuit;

FIG. 8 that includes FIGS. 8A and 8B illustrates further embodiments ofa rectifier circuit including a series circuit with a firstsemiconductor device and a plurality of second semiconductor devicesconnected in series;

FIG. 9 illustrates a power converter circuit with a boost convertertopology;

FIG. 10 illustrates a power converter circuit with a buck convertertopology;

FIG. 11 illustrates a power converter circuit with a flyback convertertopology;

FIG. 12 illustrates a power converter circuit with atwo-transistor-forward (TTF) topology;

FIG. 13 illustrates a power converter circuit with a phase-shiftzero-voltage-switching (ZVS) full-bridge topology;

FIG. 14 illustrates a power converter circuit with a hard switchinghalf-bridge topology;

FIG. 15 illustrates a power converter circuit with an LLC resonant DC/DCconverter topology;

FIG. 16 illustrates a circuit arrangement with a switch and a rectifiercircuit according to a further embodiment;

FIG. 17 illustrates embodiments of the switch and the rectifier circuitof FIG. 16;

FIG. 18 that includes FIGS. 18A and 18B illustrates further embodimentsof the detection circuit;

FIG. 19 illustrates yet another embodiment of the detection circuit;

FIG. 20 illustrates an embodiment of a half-bridge including a signalcommunication path between a low-side control circuit and a high-siderectifier circuit;

FIG. 21 that includes FIGS. 21A to 21C illustrates a first embodiment ofone second semiconductor device implemented as FINFET.

FIG. 22 that includes FIGS. 22A to 22C illustrates a second embodimentof one second semiconductor device implemented as FINFET.

FIG. 23 illustrates a vertical cross sectional view of a semiconductorbody according to a first embodiment in which a first semiconductordevice and a plurality of second semiconductor devices are implementedin one semiconductor fin.

FIG. 24 illustrates a vertical cross sectional view of a semiconductorbody according to a second embodiment in which a first semiconductordevice and a plurality of second semiconductor devices are implementedin one semiconductor fin.

FIG. 25 illustrates a top view of a semiconductor body according to athird embodiment in which a first semiconductor device and a pluralityof second semiconductor devices each including several FINFET cells areimplemented.

FIG. 26 illustrates a vertical cross sectional view of one secondsemiconductor device including several FINFET cells connected inparallel.

FIG. 27 that includes FIGS. 27A to 27C illustrates a further embodimentof one second semiconductor device including several FINFET cellsconnected in parallel.

FIG. 28 illustrates two second semiconductor devices of the typeillustrated in FIG. 27 connected in series.

FIG. 29 illustrates a vertical cross sectional view of a firsttransistor according to a further embodiment.

FIG. 30 illustrates a vertical cross sectional view of a secondtransistor according to a further embodiment.

FIG. 31 illustrates another embodiment of a rectifier circuit includinga first semiconductor device and a plurality of second semiconductordevices.

FIG. 32 schematically shows characteristic curves of a firstsemiconductor device implemented as a p-type MOSFET.

FIG. 33 illustrates a first modification of the rectifier circuit ofFIG. 31.

FIG. 34 illustrates a second modification of the rectifier circuit ofFIG. 31.

FIG. 35 illustrates a third modification of the rectifier circuit ofFIG. 31.

FIG. 36 illustrates a fourth modification of the rectifier circuit ofFIG. 31.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part thereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced.

FIG. 1 illustrates a circuit arrangement with a rectifier circuit 10connected between a first circuit block 201 and a second circuit block202. Each of the circuit blocks 201, 202 includes at least one of anelectronic device, a voltage source, a current source, at least one of aterminal for applying an electrical potential. Some embodiments of thefirst and second circuit blocks are explained with reference to furtherfigures below.

The rectifier circuit 10 includes a first load terminal coupled to thefirst circuit block 201 and a second load terminal 202 coupled to thesecond circuit block 202. The rectifier circuit 10 is configured toconduct a current I1 when a voltage V1 between the first and second loadterminals 12, 13 has a first polarity, and is configured to block whenthe voltage V1 has a second polarity opposite the first polarity and hasa magnitude that is lower than a voltage blocking capability of therectifier circuit 10. The voltage blocking capability defines themaximum voltage that may be blocked by the rectifier circuit 10. Justfor illustration purposes it is assumed that the voltage V1 has thefirst polarity when the voltage V1 is a positive voltage between thefirst and the second load terminals 12, 13, and that the voltage V1 hasthe second polarity when the voltage V1 is a negative voltage betweenthe first and the second load terminals 12, 13.

FIG. 2 illustrates a first embodiment of the rectifier circuit 10.Referring to FIG. 2, the rectifier circuit 10 includes a firstsemiconductor device 2 and a plurality of second semiconductor devices 3₁-3 _(n).

The first semiconductor device 2 has a load path between a first loadterminal 22 and a second load terminal 23 and a control terminal 21 andcan assume one of an on-state, in which the load path conducts acurrent, and an off-state, in which the load paths blocks. The firstsemiconductor device 2 according to FIG. 1 is implemented as atransistor device (transistor). Specifically, the first semiconductordevice according to FIG. 2 is implemented as a MOSFET where the controlterminal 21 is a gate terminal and the first and second 22, 23 loadterminals are source and drain terminals, respectively. The firstsemiconductor device will be referred to as first transistor in thefollowing

In FIG. 2 as well as in the following figures reference number “3”followed by a subscript index denotes the individual secondsemiconductor devices. Same parts of the individual second semiconductordevices, such as control terminals and load terminals, have the samereference character followed by an subscript index. For example, 3 ₁denotes a first one of the second semiconductor devices that has acontrol terminal 31 ₁ and first and second load terminals 32 ₁, 33 ₁. Inthe following, when reference is made to an arbitrary one of the secondsemiconductor devices or to the plurality of the second semiconductordevices, and when no differentiation between individual secondsemiconductor devices is required, reference numbers 3, 31, 32, 33without indices will be used to denote the second semiconductor devicesand their individual parts.

The second semiconductor devices 3 are implemented as transistor devices(transistors) in the embodiment illustrated in FIG. 5 and will bereferred to as second transistors in the following. Each of the secondtransistors 3 has a control terminal 31 and a load path between a firstload terminal 32 and a second load terminal 33. The load paths 32-33 ofthe second semiconductor devices are connected in series with each otherso that the first load terminal of one second transistor is connected tothe second load terminal of an adjacent second transistor. Further, theload paths of the second transistors 3 are connected in series with theload path 22-23 of the first semiconductor device 2, so that the firstsemiconductor device 1 and the plurality of second transistors 3 form acascode-like circuit.

Referring to FIG. 3, there are n second transistors 3, with n>1 (orn≧2). From these n second transistors 3, a first second transistors 3 ₁is the second transistor that is arranged closest to first semiconductordevice 2 in the series circuit with the n second transistors 3 and hasits load path 32 ₁-33 ₁ directly connected to the load path 22-23 of thefirst semiconductor device 2. An n-th second transistors 3 _(n) is thesecond transistor that is arranged most distant to first semiconductordevice 2 in the series circuit with the n second transistors 3. In theembodiment illustrated in FIG. 5, there are n=4 second transistors 3.However, this is only an example, the number n of second transistors 3can be selected arbitrarily, namely dependent on a desired voltageblocking capability of the semiconductor device arrangement. This isexplained in greater detail herein below.

Each of the second transistors 3 has its control terminal 31 connectedto one of the load terminals of another one of the second transistors 3or to one of the load terminals of the first transistor 2. In theembodiment illustrated in FIG. 1, the 1st second transistor 3 ₁ has itscontrol terminal 31 ₁ connected to the first load terminal 22 of thefirst transistor 2. Each of the other second transistors 3 ₂-3 _(n-1)have their control terminal 31 ₂-31 _(n) connected to the first loadterminal 32 ₁-32 ₃ of the second transistor that is adjacent in theseries circuit in the direction of the first semiconductor device 2.Assume, for explanation purposes, that 3 _(i) is one of the secondtransistors 3 ₂-3 _(n) other than the 1st second transistor 3 ₁. In thiscase, the control terminal 31 _(i) of this second transistor (uppersecond transistor) 3 _(i) is connected to the first load terminal 32_(i−1) of an adjacent second transistor (lower second transistor) 3_(i−1). The first load terminal 32 _(i−1) of the lower second transistor3 _(i−1) to which the control terminal of the upper second transistor 3_(i) is connected to is not directly connected to one of the loadterminals 32 _(i), 33 _(i) of this upper second transistor 3 _(i).According to a further embodiment (not illustrated), a control terminal31 _(i) of one second transistor 3 _(i) is not connected to the firstload terminal 31 _(i−1) of that second transistor 3 _(i−1) that isdirectly connected to the second transistor 3 _(i), but is connected tothe load terminal 32 _(i−k) of a second transistor 3 _(i−k), with k>1,farther away from the transistor. If, for example, k=2, then the controlterminal 31 _(i) of the second transistor 3 _(i) is connected to thefirst load terminal 32 _(i−2) of the second transistor 3 _(i−2) that istwo second transistors away from the second transistor 3 _(i) in thedirection of the first transistor 2 in the series circuit.

Referring to FIG. 2, the first transistor 2 and the second transistors 3can be implemented as MOSFETs. Each of these MOSFETs has a gate terminalas a control terminal 21, 31, a source terminal as a first load terminal22,32, and a drain terminal as a second load terminal 23, 33. MOSFETsare voltage controlled devices that can be controlled by the voltageapplied between the gate and source terminals (the control terminal andthe first load terminal). Thus, in the arrangement illustrated in FIG.2, the 1st second transistors 3 ₁ is controlled through a voltage thatcorresponds to the load path voltage of the first transistor 2, and theother second transistors 3 _(i) are controlled through the load pathvoltage of at least one second transistor 3 _(i−1) or 3 _(i−2). The“load path” voltage of one MOSFET is the voltage between the first andsecond load terminal (drain and source terminal) of this MOSFET.

In the embodiment illustrated in FIG. 2, the first transistor 2 is anormally-off (enhancement) transistor, while the second transistors 3are normally-on (depletion) transistors. However, this is only anexample. Each of the first semiconductor device 2 and the secondtransistors 3 can be implemented as a normally-on transistor or as anormally-off transistor. The individual transistors can be implementedas n-type transistors or as p-type transistors. It is even possible toimplement the first transistor 2 as a transistor of a first conductiontype (n-type or p-type) and to implement the second transistors astransistors of a second conduction type (p-type or n-type) complementaryto the first type.

Implementing the first transistor 2 and the second transistors 3 asMOSFETs is only an example. Any type of transistor can be used toimplement the first semiconductor device 2 and the second transistors 3,such as a MOSFET, a MISFET, a MESFET, an IGBT, a JFET, a FINFET, ananotube device, an HEMT, etc. Independent of the type of device used toimplement the first semiconductor device 2 and the second semiconductordevices 3, these devices are connected such that each of the secondsemiconductor devices 3 is controlled by the load path voltage of atleast one other second semiconductor devices 3 or the firstsemiconductor device 2 in the series circuit.

The semiconductor device arrangement 1 with the first transistor 2, andthe second transistors 3 can be switched on and off like a conventionaltransistor by applying a suitable drive voltage or drive signal S2 tothe first semiconductor device 2. The control terminal 21 of the firsttransistor 2 forms a control terminal 11 of the overall arrangement 1,and the first load terminal 21 of the first transistor 2 and the secondload terminal of the n-th second transistor 3 _(n) form the first andsecond load terminals 12, 13, respectively, of the overall arrangement.The drive signal S2 for switching on and off the first transistor 2 and,therefore, the semiconductor device arrangement, can be generated indifferent ways explained below. When the first transistor 2 is switchedon, the semiconductor device arrangement 1 may conduct a current in bothdirections, namely the first direction and the second directionexplained with reference to FIG. 1. However, the drive signal S2 isgenerated such that it switches on the semiconductor device arrangement1 only when the voltage V1 between the first and second load terminals12, 13 has the first polarity. That is, when the voltage V1 is apositive voltage between the first and second load terminals in theembodiment of FIG. 2. Thus, the semiconductor device arrangement 1, actsas a rectifier element in the rectifier circuit 10.

The operating principle of the semiconductor device arrangement 1 isexplained in the following. Just for explanation purposes it is assumedthat the first transistor 2 is implemented as an n-type enhancementMOSFET, that the second transistors 3 are implemented as n-typedepletion MOSFETs or n-type JFETs, and that the individual devices 2, 3are interconnected as illustrated in FIG. 5. The basic operatingprinciple, however, also applies to semiconductor device arrangementsimplemented with other types of first and second semiconductor devices.

It is commonly known that depletion MOSFETs or JFETs, that can be usedto implement the second transistors 3, are semiconductor devices thatare in an on-state when a drive voltage (gate-source voltage) of aboutzero is applied, while depletion MOSFETs or JFETs are in an off-statewhen the absolute value of the drive voltage is higher than a pinch-offvoltage of the device. The “drive voltage” is the voltage between thegate terminal and the source terminal of the device. In an n-typedepletion MOSFET or JFET the pinch-off voltage is a negative voltage,while the pinch-off voltage is a positive voltage in a p-type depletionMOSFET or JFET.

When a voltage is applied between the first and second load terminals12, 13 and when the first transistor 2 is switched on by applying asuitable drive potential (drive signal) S2 to the control terminal 11,the 1st second transistor 3 ₁ is conducting (in an on-state), theabsolute value of the voltage across the load path 22-23 of the firsttransistor 2 is too low so as to pinch-off the 1st second transistor 3₁. Consequently, the second transistor 3 ₂ controlled by the load pathvoltage of second transistor 3 ₁ is also starting to conduct, etc. Inother words, the first transistor 2 and each of the second transistors 3are finally conducting so that the semiconductor arrangement 1 is in anon-state.

The first transistor 1 implemented as a MOSFET may be implemented withan internal diode D2 (that is also illustrated in FIG. 2) known as bodydiode. The body diode is parallel to the load path of the transistor. Inan n-type MOSFET (as illustrated in FIG. 2) an anode terminal of thediode D2 corresponds to the source terminal 22 of the MOSFET, while acathode terminal corresponds to the drain terminal 23. Thus, a positivesource-drain voltage (negative drain-source voltage) of the firsttransistor 1 forward biases the body diode D2. In a p-type MOSFET anegative source-drain voltage (positive drain-source voltage) forwardbiases the body diode.

Referring to FIG. 2, the first transistor 1 is connected such that aload path voltage V1 with the first polarity (as illustrated in FIG. 2)forward biases the body diode D2. When the body diode D2 is forwardbiased, a voltage drop across the body diode D2 switches on the 1stsecond transistor 3 ₁, which again switches on the 2nd second transistor3 ₂, and so on. Thus, when the first transistor 1 is switched off, thesemiconductor device arrangement by virtue of the body diode D2automatically operates as a rectifier element that conducts a currentwhen the load path voltage V2 has the first polarity. When the polarityof the external voltage V1 changes to the second polarity (which isopposite to the polarity illustrated in FIG. 2), the body diode D2 isreverse biased so that the 1st second transistor 3 ₁ starts to switchoff when the absolute value of the load-path voltage reaches thepinch-off voltage of the 1st second transistor 3 ₁.

When the 1st second transistor 3 ₁ is switched off, the voltage dropacross its load path increases so that the 2nd second transistor 3 ₂ isswitched off, which in turn switches off the 3rd second transistor, andso on, until each of the second transistors 3 is switched off and thesemiconductor device arrangement 1 is finally in a stable off-state. Theexternal voltage V1 with the second polarity applied between the secondand first terminals 13 and 12 switches as many 2nd transistors from theon-state to the off-state as required to distribute the external voltageover the first semiconductor device 2 and the second transistors 3. Whenapplying a low external voltage V1 with the second polarity, some secondtransistor 3 are still in the on-state, while others are in theoff-state. The number of second transistors 3 that are in the off-stateincreases as the external voltage V1 with the second polarity increases.Thus, when a high external voltage V1 with the second polarity isapplied, that is in the range of the voltage blocking capability of theoverall semiconductor device arrangement 1, the first semiconductordevice 1 and each of the second transistors 3 are in the off-state

When the semiconductor device arrangement 1 is in an off-state and whenthe external voltage V1 changes the polarity to the first polarity. Assoon as the voltage across the body diode D2 drops to a voltage of aboutzero, the normally-on 1st second transistors 3 ₁ switches on which inturn switches on the 2nd second transistor 3 ₂, and so on. Thiscontinues until each of the second transistors 3 is again switched on.The body diode D2 conducts as soon as the voltage V1 with the firstpolarity increases to the forward voltage of the body diode D2. Thisforward voltage is about 0.7V when the body diode (and the othersemiconductor devices) is implemented in silicon.

Although the body diode D2 enables a current flow in the first directionwhen the load voltage V1 has the first polarity, the first transistor 1through the drive signal 2 may additionally be switched on when thevoltage V1 has the first polarity in order to reduce losses. Lossesoccurring in the body diode D2 correspond to the product of forwardvoltage of the diode, which is about 0.7V when the first transistor 1 isimplemented in silicon technology, and the current I1. This voltage dropacross the body diode D2 may be reduced to below the forward voltagewhen switching on the first transistor 1. When the first transistor 1 isin the on-state (switched on) the body diode D2 is bypassed. When thefirst transistor 1 is switched off and the external voltage V1 still hasthe first polarity, the body diode D2 takes the current and keeps thesecond transistor 3 switched on until the external voltage changes tothe second polarity.

It is desirable to switch off the first transistor 1 before the voltageV1 changes to the second polarity in order to prevent a current flow inthe second direction. Embodiments of drive circuits and drive schemesthat switch on the first transistor 1 only when the voltage V1 has thefirst polarity are explained below.

Switching states of the second transistors 3 connected in series withthe first transistor 2 are dependent on the switching state of the firsttransistor 2 and follow the switching state of the first transistor 2when the voltage V1 has the second polarity. Thus, the secondtransistors 3 are switched off when the first transistor 2 is switchedoff and when the voltage V1 has the second polarity. Further, by virtueof the body diode D2 the second transistors 3 are switched onindependent of the switching state of the first transistor 1 when thevoltage V1 has the first polarity. In this case, switching on the firsttransistor 1 helps to reduce the losses.

In the following, an “on-state” of the semiconductor device arrangement(rectifier element) 1 is an operation state in which the voltage V1 hasthe first polarity and in which the first transistor 1 is switched on.An “off-state” is an operation state in which the voltage V1 has thesecond polarity and the first transistor 1 is switched off. Thesemiconductor arrangement 1 has a low resistance between the first andsecond load terminals 12, 13 in the on-state, and has a high resistancebetween the first and second load terminals 12, 13 in the off-state. Inthe on-state, an ohmic resistance between the first and second loadterminals 12, 13 corresponds to the sum of the on-resistances R_(ON) ofthe first semiconductor device 2 and the second transistors 3 (where theon-resistance is slightly increased when the first transistor 1 isswitched off and the body diode D2 conducts the current). A voltageblocking capability, which is the maximum voltage that can be appliedbetween the first and second load terminals 12, 13 when thesemiconductor arrangement is in an off-state before an Avalanchebreakthrough sets in, corresponds to the sum of the voltage blockingcapabilities of the first transistor 2 and the second transistors 3. Thefirst transistor 1 and the individual second transistors may haverelatively low voltage blocking capabilities, such as voltage blockingcapabilities of between 3V and 50V. However, dependent on the number nof second transistors 3 a high overall voltage blocking capability of upto several 100V, such as 600V or more, can be obtained.

The voltage blocking capability and the on-resistance of thesemiconductor arrangement 1 are defined by the voltage blockingcapabilities of the first transistor 2 and the second transistors 3 andby the on-resistances of the first transistor 2 and the secondtransistors 3, respectively. When significantly more than two secondtransistors are implemented (n>>2), such as more than 5, more than 10,or even more than 20 second transistors 3 are implemented, the voltageblocking capability and the on-resistance of the semiconductorarrangement 1 are mainly defined by the arrangement 30 with the secondtransistors 3. The overall semiconductor arrangement 1 can be operatedlike a conventional power transistor, where in a conventional powertransistor, an integrated drift region mainly defines the on-resistanceand the voltage blocking capability. Thus, the arrangement 30 with thesecond transistors 3 has a function that is equivalent to the driftregion in a conventional power transistor. The arrangement 30 with thesecond transistors 30 will, therefore, be referred to as active driftregion (ADR) or active drift zone (ADZ). The overall semiconductordevice arrangement 1 of FIG. 2 can be referred to as ADZ transistor orADR transistor (ADZ transistor) or as ADRFET (ADZFET), when the firstsemiconductor device is implemented as a MOSFET.

When the semiconductor device arrangement 1 is in the off-state, thevoltage V1 (with the second polarity) applied between the first andsecond load terminals 12, 13 is distributed such that a part of thisvoltage drops across the load path 22-23 of the first transistor 2,while other parts of this voltage drop across the load paths of thesecond transistors 3. However, there may be cases in which there is noequal distribution of this voltage to the second transistors 3. Instead,those second transistors 3 that are closer to the first semiconductordevice 2 may have a higher voltage load than those second transistors 3that are more distant to the first semiconductor device 2.

In order to more equally distribute the voltage to the secondtransistors 3, the semiconductor arrangement optionally includes voltagelimiting means 7 ₁-7 _(n) that are configured to limit or clamp thevoltage across the load paths of the second transistors 3. Optionally, aclamping element 7 ₀ is also connected in parallel to the load path(between the source and drain terminals) of the first semiconductordevice 2. These voltage clamping means 7 ₀-7 _(n) can be implemented inmany different ways. Just for illustration purposes the clamping means 7₀-7 _(n) illustrated in FIG. 2 include Zener diodes 7 ₀-7 _(n), witheach Zener diode 7 ₀-7 _(n) being connected in parallel with the loadpath of one of the second transistors 3 and, optionally, the firsttransistor 2.

Instead of the Zener diodes 7 ₀-7 _(n), tunnel diodes, PIN diodes,avalanche diodes, or the like, may be used as well. According to afurther embodiment (not illustrated), the individual clamping elements 7₀-7 _(n) are implemented as transistors, such as, for example, p-typeMOSFETs when the second transistors 3 are n-type MOSFETs. Each of theseclamping MOSFETs has its gate terminal connected to its drain terminal,and the load path (the drain-source path) of each MOSFET is connected inparallel with the load path of one second transistor 3.

The individual clamping elements, such as the Zener diodes 7 ₀-7 _(n)illustrated in FIG. 2 can be integrated in the same semiconductor bodyas the first transistor 2 and the second transistors 3. However, theseclamping elements could also be implemented as external devices arrangedoutside the semiconductor body.

As compared to a conventional power transistor with an integrated bodydiode, the semiconductor device arrangement 1 with the first transistor2 and the plurality of second transistors 3 has reduced switching lossesand switches faster from the off-state to the on-state. In aconventional power transistor, switching losses occur by charging anoutput capacitance of the transistor at the time of switching on and bydischarging the output capacitance at the time of switching off. Theoutput capacitance (C_(OSS)) includes an internal drain-sourcecapacitance (C_(DS)) and an internal gate-drain capacitance (C_(GD)) ofthe transistor. Losses further occur due to reverse recovery effects inthe body diode. When the body diode is forward biased, electricalcharges are stored in the body diode. These charges have to be removedwhen the body diode is reverse biased before the body diode blocks.Storing charges in the body diode and removing charges from the bodydiode induces losses. These losses increase with the amount of chargesstored in the forward biased body diode, where this amount increases asthe voltage blocking capability of the power transistor increases.

In the semiconductor device arrangement (ADRFET) 1 the outputcapacitance of the first transistor 2, that may have a voltage blockingcapability of several volts up to several 10V, is lower than the outputcapacitance of a conventional power transistor, that may have a voltageblocking capability of up to several 100V. Further, less charges arestored in the body diode of the first transistor 2 when the body diodeD2 is forward biased. Thus, losses occurring in the first transistor 2of the ADRFET 1 are lower than losses occurring in a power MOSFET havingthe same voltage capability of the ADRFET 1. The low output capacitanceof the first transistor 2 not only keeps switching losses low, but alsoresults in high switching speeds, which means in fast transitionsbetween the on-state and the off-state of the switch 1, and vice versa.

Gate-source capacitances, gate-drain capacitances and drain sourcecapacitances of the second transistors 3 are also charged and dischargedwhen the switch 1 is switched on and off. However, electrical chargesrequired for charging these capacitances of the second transistors 3 aremainly kept in the arrangement 30 with the second transistors 3, so thatthese charges do not have to be provided by the drive circuit 20 in eachswitching process. These charges are provided via the load path of theADRFET. Further, by virtue of the relatively low voltage blockingcapabilities of the second transistors 3, the sum of these capacitancesof the second transistors 3 is lower than the corresponding outputcapacitance of a power transistor having the same voltage blockingcapability as the ADRFET 1.

FIG. 3 illustrates a further embodiment for implementing the rectifierelement (ADRFET) 1 of the rectifier circuit 10. In the rectifier element1 of FIG. 3 the first transistor 2 is implemented with a depletionMOSFET, specifically with an n-type depletion MOSFET. Like in theembodiment of FIG. 2, the second transistors 3 of FIG. 3 may beimplemented as depletion transistors, specifically as n-type depletiontransistors. The arrangement 30 with the second transistor is onlyschematically illustrated in FIG. 3. The individual second transistorsof the arrangement 30 may be interconnected as explained with referenceto FIG. 2. The operating principle of the rectifier element 1 of FIG. 3corresponds to the operating principle of the rectifier element of FIG.2 with the difference that a negative drive voltage (gate-sourcevoltage) is required to switch off the first transistor 2 of FIG. 3,while the enhancement transistor 2 of FIG. 2 already switches when thegate-source voltage decreases below a positive threshold voltage.

Referring to the explanation above, the first transistor 2 of therectifier element 1 receives a drive signal S2. According to oneembodiment, the drive signal S2 is generated such that it switches thefirst transistor 2 on when the external voltage V1 has the firstpolarity and switched the first transistor 2 off when the externalvoltage has the second polarity. According to one embodiment, the drivesignal S2 is an externally generated drive signal or is dependent onsuch externally generated drive signal. An externally generated drivesignal is a drive signal generated by an external circuit and isprovided to the rectifier circuit 10. According to a further embodiment,the drive signal S2 is an internally generated drive signal. Aninternally generated drive signal is a drive signal generated in therectifier circuit 10.

FIG. 4 schematically illustrates an embodiment of the rectifier circuit10 that receives an externally generated drive signal Sin. According toone embodiment, the externally generated drive signal Sin is provided tothe first transistor 2 as the drive signal S2 of the transistor 2.According to a further embodiment, a drive circuit 14 (illustrated indashed lines) receives the externally generated drive signal Sin andgenerates the drive signal S2 of the transistor 2 from the receiveddrive signal Sin. The drive circuit 14 may be configured to adapt signallevels of the received drive signal Sin such that signal levels suitablefor driving the first transistor 2 are obtained.

The rectifier element 1 of FIG. 4 corresponds to the rectifier elementof FIG. 2. However, this is only an example. The rectifier element 1could be implemented like any of the rectifier elements explainedbefore.

FIG. 5 illustrates an embodiment of a rectifier circuit 10 in which adrive signal S2 of the first transistor 2 is internally generated.Referring to FIG. 5, the rectifier circuit 10 includes a control anddrive circuit 8 and a detection circuit 9. The control and drive circuit8 receives a detection signal S_(D) from the detection circuit 9 and isconfigured to generate the drive signal S2 dependent on the detectionsignal S_(D). The detection circuit 9 is configured detect (evaluate) anoperation parameter of the rectifier circuit. The operation parameter isdependent on at least one of a current through the rectifier element(body diode) D2 in the first semiconductor device 2, a voltage acrossthe rectifier element D2, and a voltage between the first load terminal12 and the second load terminal 13.

According to one embodiment, the detection circuit 9 provides as thedetection signal S_(D) a current measurement signal representing thecurrent I1. In this case, the detection signal S_(D) includes aninformation on the current direction (corresponding to the sign of thedetection signal S_(D)) and an information on the magnitude of thecurrent I1. In this embodiment, the control and drive circuit 8 may beconfigured to switch on the first transistor 2 each time the detectionsignal S_(D) indicates that the current I1 flows in the first direction(which in the embodiment of FIG. 5 is the current flow directionillustrated in FIG. 5). The body diode D2 of the first transistor 2enables a current flow in the first direction I1 before the firsttransistor 2 is switched on. The first transistor 2 may be switched offwhen the current I1 falls below a predefined current threshold. Adecrease of the current I1 to below the current threshold may indicatethat the current I1 is probably about to decrease to zero and that apolarity of the voltage V1 is probably about to change to the secondpolarity (the polarity opposite to the polarity illustrated in FIG. 5).

According to a further embodiment, the detection circuit 9 provides asthe detection signal S_(D) a current measurement signal representing thecurrent I1 and the control and drive circuit 8 is configured todetermine a time variation of the current measurement signal S_(D).According to one embodiment, the control and drive circuit 8 isconfigured to switch on the first transistor 2, when the detectioncircuit S_(D) indicates that the current I1 flows in the firstdirection. Further, the control and drive circuit 8 is configured toswitch off the first transistor 2 when the current I1 flowing in thefirst direction decreases and when a slope of the (decreasing) currentis higher than a predefined falling slope threshold. This is equivalentto the fact that a (negative) differential coefficient (dl1/dt) of thecurrent I1 has a magnitude higher than the predefined slope threshold.Alternatively, the control and drive circuit 8 switches on the firsttransistor 2 when the current I1 flows in the first direction andincreases and when the slope of the increasing current I1 is above afurther slope threshold. This is equivalent to the fact that thepositive differential coefficient (dl1/dt) of the current I1 is abovethe further slope threshold.

According to yet another embodiment, the detection signal S_(D)represents a voltage V2 across the body diode. The polarity of thisvoltage V2 corresponds to the polarity of the voltage V1 between theload terminals 12, 13. The body diode voltage V2 has the first polaritywhen it forward biases the body diode D2 and has the second polaritywhen it reverse biases the body diode. The body diode D2 starts toconduct, when the voltage V2 has the first polarity and a magnitudecorresponding to the forward voltage of the body diode D2 (about 0.7V insilicon). According to one embodiment, the control and drive circuit 8is operable to switch on the first transistor 1 when the detectionsignal S_(D) indicates that the body diode voltage V2 has the firstpolarity and reaches a first voltage threshold. The first voltagethreshold may be below the forward voltage of the body diode D2. In thiscase the control drive circuit 8 may switch on the first transistor 2before the body diode conducts. However, due to the propagation delaysthe body diode voltage may increase to the forward voltage between thetime when the body diode voltage V2 reaches the first voltage thresholdand the time when the first transistor 1 switches on, so that the bodydiode D2 is conducting before the first transistor 1 switches on. Thecontrol and drive circuit 8 may further be operable to switch off thefirst transistor 1, when the detection signal indicates that the bodydiode voltage V2 has the first polarity and falls to a second voltagethreshold, such as zero.

According to a further embodiment in which the detection signal S_(D)represents the body diode voltage V2, the control and drive circuit 8 isoperable to switch on the first transistor 1 when the detection signalS_(D) indicates that the body diode voltage V2 has the first polarityand increases and that a slope of the increasing voltage reaches apredefined first voltage slope threshold. Further, the control and drivecircuit 8 is operable to switch off the first transistor 1 when thedetection signal S_(D) indicates that the body diode voltage V2 has thefirst polarity and decreases and that a slope of the decreasing voltagereaches a predefined second voltage slope threshold. The control anddrive circuit 8 may differentiate (calculate a time derivative) of thedetection signal S_(D) in order to obtain the slopes of rising andfalling edges of the body diode voltage V2.

FIG. 6 illustrates one embodiment of the control and drive circuit 8 ingreater detail. In the embodiment of FIG. 6, the detection circuit 9 isimplemented as a current sensor that is configured to measure thecurrent I1 through the rectifier element 1 and that generates a currentmeasurement signal S_(D) as the detection signal. The control and drivecircuit 8 includes a supply circuit 81 configured to provide a supplyvoltage V_(SUP) and an evaluation and drive circuit 82. The evaluationand drive circuit 82 receives the supply voltage V_(SUP) and thedetection circuit S_(D) and is configured to generate the drive signalS2 from the supply voltage V_(SUP) dependent on the detection signalS_(D). The evaluation and drive circuit 82 may be configured to evaluatethe detection signal S_(D) as explained in connection with FIG. 5 and togenerate the drive signal S2 dependent on the evaluation.

The supply circuit 81 of FIG. 6 includes a capacitive storage element183, and a rectifier element 181, such as a diode, connected in serieswith the capacitive storage element 183. The series circuit with thecapacitive storage element 183 and the rectifier element 181 isconnected between the load terminals 13, 12 of the rectifier element 1.The capacitive storage element 183 is charged each time the voltage V1across the rectifier element 1 has the second polarity, which is whenthe first transistor 2 is to be switched off. The rectifier element 181prevents the capacitive storage element 183 from being discharged whenthe voltage V1 changes to the first polarity. Optionally, the supplycircuit 81 further includes a voltage limiting element that isconfigured to limit the voltage across the capacitive storage element183. According to one embodiment, the voltage limiting element 182 isimplemented as a depletion MOSFET or a JFET and is connected in serieswith the capacitive storage element 183. The capacitive storage element183 is connected between the source terminal and the gate terminal ofthe depletion MOSFET (JFET). The depletion MOSFET (JFET) pinches offwhen the voltage across the capacitive storage element 183 equals thepinch-off voltage of the depletion MOSFET (JFET). This pinch-off voltageis selected such that the supply voltage V_(SUP) reaches a predefinedvoltage, such as, e.g., 15V, 10V, 5V or the like. Implementing thevoltage limiting element 182 as a depletion MOSFET or JFET is only anexample. Any other type of voltage limiting element may be used as well.

FIG. 7A illustrates one embodiment of the current sensor 9 of FIG. 6.Referring to FIG. 7, the current sensor includes a current mirror with afirst current mirror transistor 91 ₁ and a second current mirrortransistor 91 ₂. The two current mirror transistors 91 ₁, 91 ₂ havetheir control terminals (gate terminals) connected, and a load path(drain-source path) of the first current mirror transistor 91 ₁ isconnected in series with the load path of the first transistor 2. Thefirst current mirror transistor 91 ₁ is connected in series with a firstresistor 91 ₆, with the series circuit with the first current mirrortransistor 91 ₁ and the first resistor 91 ₆ being connected between thefirst transistor 2 and the transistor arrangement 30. The first currentmirror transistor 91 ₁ is connected as a diode and has its controlterminal (gate terminal) connected with one of its load terminals (drainterminal). The second current mirror transistor 91 ₂ has its load pathconnected in series with a second resistor 91 ₅ and a further transistor91 ₃, with this series circuit being connected between the first loadterminal 12 and the transistor arrangement 30.

In the embodiment of FIG. 7, the current mirror transistors 91 ₁, 91 ₂are implemented as MOSFETs, in particular as p-type MOSFET, which eachhave their source terminal coupled to the arrangement 30 with the secondtransistors, via the first resistor 91 ₆ and the second resistor 91 ₅,respectively. The further transistor 91 ₃ is of the same type as thefirst transistor 2 and has its load path connected between the firstload terminal 12 and the second current mirror transistor 91 ₂. Thefurther transistor 91 ₃ receives the drive signal S2 and is switched onand off synchronously with the first transistor 2. The furthertransistor 91 ₃ also includes a body diode. However, this body diode isnot explicitly illustrated in FIG. 7A.

Referring to FIG. 7A, the detection circuit 9 further includes anamplifier, such as an operation amplifier (OA). The amplifier receives avoltage across the second resistor 91 ₅ as an input signal and providesthe detection signal S_(D). The detection signal S_(D) represents theamplitude of the current I1 through the first transistor 2 (includingthe body diode D2).

FIG. 7B illustrates a further embodiment of a detection circuit 9. Thedetection circuit of FIG. 7B is a modification of the detection circuitof FIG. 7A and further includes a second current mirror with a thirdcurrent mirror transistor 91 ₇ connected as a diode and a fourth currentmirror transistor 91 ₈. These two current mirror transistors 91 ₇, 91 ₈have their control terminals (gate terminals) connected together. Thesecond current mirror is connected between the first current mirror andthe first transistor 2 and the further transistor 91 ₃, where the loadpath of the third current mirror transistor 91 ₇ is connected betweenthe first current mirror transistor 91 ₁ and the first transistor 2, andthe load path of the fourth current mirror transistor 91 ₈ is connectedbetween the second current mirror transistor 91 ₂ and the furthertransistor 91 ₃. The detection signal S_(D) is again available at theoutput of the amplifier 91 ₄. While the detection circuit 9 of FIG. 7Ais only capable of measuring the current I1 when the current I1 has thefirst direction (as indicated in FIG. 7A), the detection circuit 9 ofFIG. 7B is capable of measuring the current I1 in both directions.

FIG. 8A illustrates a further embodiment of the rectifier circuit 10. Inthis embodiment, the first semiconductor element 2 of the rectifierelement 1 is implemented as a diode. The operating principle of thisdiode 2 corresponds to the operating principle of the body diode D2 ofthe first transistor in the rectifier elements 1 explained before. Thediode 2 of FIG. 8 may be implemented as the body diode of a MOSFET thathas its gate terminal connected to its source terminal. That is, a gateterminal of the MOSFET is not connected to a drive circuit or the like.

The operating principle of the rectifier circuit 10 of FIG. 8Acorresponds to the operating principle of the rectifier circuit 10 ofFIG. 2, when the body diode D2 of the first transistor 2 of FIG. 2 isconducting. The rectifier circuit 10 of FIG. 8 with the firstsemiconductor element 2 implemented as a diode has higher losses than arectifier circuit 10 with the first semiconductor device 2 implementedas a transistor. However, the losses of the rectifier element 1 with thediode 2 and the arrangement 30 with the plurality of second transistorshas lower losses and switches off faster than a conventional diodehaving the same voltage blocking capability as the rectifier circuit 10.

FIG. 8B illustrates another embodiment of a the rectifier circuit. Inthis embodiment, the first semiconductor device 2 is implemented with ap-type transistor, specifically a p-type MOSFET, This transistor isconnected as a diode and has its control terminal (gate terminal)connected with one of its load terminals (drain terminal). In theembodiment of FIG. 8B, the source terminal of the MOSFET is connected tothe first load terminal 12, while the drain terminal is connected to thetransistor arrangement 30. The transistor arrangement may be implementedas explained with reference to FIG. 2 before. In particular, thetransistor arrangement 30 may be implemented with n-type depletionMOSFETs or JFETs.

The rectifier arrangement of FIG. 8B conducts a current I1 in the firstdirection (the direction indicated in FIG. 8B) when the voltage V1between the load terminals 12, 13 has the first polarity, so that avoltage V2 across the MOSFET 2, has the first polarity, and when thevoltage V2 across the transistor reaches the threshold voltage of theMOSFET 2. According to one embodiment, the MOSFET is implemented with athreshold voltage of about 0V.

The rectifier circuit 10 as explained before may be implemented in avariety of circuit applications, such as industrial, automotive orconsumer electronic applications. In particular, the rectifier circuit10 may be used in power converter circuits operable to generate anoutput voltage from an input voltage. Embodiments of some powerconverter circuits including at least one rectifier circuit 10 of thetype explained before are explained with reference to drawings below.

FIG. 9 illustrates an embodiment of a power converter circuit with aboost converter topology. Referring to FIG. 9, the converter circuitincludes input terminals 201, 202 for receiving an input voltage Vin andoutput terminals 203, 204 for providing an output voltage Vout. Aninductive storage element 205, such as a choke, is connected in serieswith a switch 206. The series circuit with the inductive storage element205 and the switch 206 is connected between the input terminals 201,202. A series circuit with a rectifier circuit 10 and a capacitivestorage element 207 is connected in parallel with the switch 206, wherethe output voltage Vout is available across the capacitive storageelement 207. The rectifier circuit 10 may be implemented in accordancewith one of the embodiments explained before.

Referring to FIG. 9, the power converter circuit further includes adrive circuit 208 that is configured to provide a pulse-width modulated(PWM) drive signal S206 to the switch 206 dependent on an output signalSout. The output signal Sout is dependent on the output voltage Vout andrepresents the output voltage Vout. The drive circuit 208 may beimplemented like a conventional PWM controller and is configured toadjust a duty-cycle of the drive signal S206 such that the outputvoltage Vout equals a pre-defined set voltage.

The operating principle of the power converter circuit of FIG. 9 is asfollows: Each time the switch 206 is switched on, energy is magneticallystored in the inductive storage element 205. When the switch 206 isswitched off, a current I1 through the inductive storage element 205continuous to flow, where this current flows through the rectifiercircuit 10 to the output terminals 203, 204 and the capacitive storageelement 207, respectively. The output voltage Vout is a DC voltage. Theinput voltage Vin may be a DC voltage or an AC voltage. The outputvoltage Vout is higher than the input voltage Vin or higher than anamplitude of an input voltage Vin.

According to one embodiment, the rectifier circuit 10 is operable toreceive an external drive signal Sin. This external drive signal Sin maybe provided by the control circuit 208. In this embodiment, the controlcircuit 208 may be implemented such that it switches on the firsttransistor in the rectifier circuit 10 each time the switch 206 isswitched off, and switches off the first transistor each time the switch206 is switched or each time the current I1 decreases to zero. Howeverit is also possible to implement the rectifier circuit 10 (and each ofthe rectifier circuits explained below) such that a drive signal for thefirst transistor 2 (not illustrated in FIG. 9) is internally generated,as explained with reference to FIGS. 5 and 6, or such that the rectifiercircuit 10 is implemented with a diode as the first semiconductorelement, as explained with reference to FIG. 8.

FIG. 10 illustrates an embodiment of a power converter circuit with abuck converter topology. In this embodiment, a series circuit with aswitch 306, an inductive storage element 305 and a capacitive storageelement 307 is connected between input terminals 301, 302. The inputterminals 301, 302 are operable to receive an input voltage Vin. Anoutput voltage Vout is available between output terminals 303, 304across the capacitive storage element 307. A rectifier circuit 10 isconnected in parallel with the series circuit with the inductive storageelement 305 and the capacitive storage element 307. The rectifiercircuit 310 may be implemented in accordance with one of the embodimentsexplained before.

Referring to FIG. 10, a control circuit 308 generates a drive signalS306 for the switch 306. The drive signal is a pulse-width modulated(PWM) drive signal generated by the control circuit 308 dependent on anoutput signal Sout. The output signal Sout represents the output voltageVout. The control circuit 308 adjusts the duty-cycle of the drive signalS306 such that the output voltage Vout corresponds to a pre-defined setvoltage.

The operating principle of the power converter circuit of FIG. 10 is asfollows: Each time the switch 306 is switched on, a current I1 flowsdriven by the input voltage Vin through the series circuit with theswitch 306, the inductive storage element 305 and the capacitive storageelement 307. When the switch 306 is switched off, the rectifier circuit10 acts as a freewheeling element and enables the current I1, driven bythe inductive storage element 305, further to flow.

The rectifier circuit 10 may be operable to receive an external drivesignal Sin. According to one embodiment, this drive signal Sin isprovided by the control circuit 308. In this case, the control circuit308 is configured such that the switch 306 and the rectifier circuit 10are not driven in the on-state at the same time. According to oneembodiment, the control circuit 308 switches on the transistor in therectifier circuit 10 each time the switch 306 is switched off. Further,the control circuit 308 is configured to switch off the transistor inthe rectifier circuit 10 each time the switch 306 is switched off oreach time the current I1 decreases to zero.

FIG. 11 illustrates an embodiment of a power converter circuit includinga flyback converter topology. Referring to FIG. 11, the power converterincludes a transformer 405 with a primary winding 405 ₁ and a secondarywinding 405 ₂. The primary winding 405 ₁ is connected in series with aswitch 406, with the series circuit with the primary winding 405 ₁ andthe switch 406 connected between input terminals 401, 402 for receivingan input voltage Vin. A series circuit with a rectifier circuit 10 and acapacitive storage element 407 is connected in parallel with thesecondary winding 405 ₂. An output voltage Vout is available acrosscapacitive storage element 407 between output terminals 403, 404.

Referring to FIG. 11, a control circuit 408 generates a drive signalS406 of the switch 406 dependent on an output signal Sout. The outputsignal Sout is representative of the output voltage Vout. The drivesignal S406 is a pulse-width modulated (PWM) drive signal. The controlcircuit 408 adjusts the duty-cycle of the drive signal S406 such thatthe output voltage Vout corresponds to a predefined set voltage.

The operating principle of the power converter circuit of FIG. 11 is asfollows: Each time the switch 406 is switched on, the primary winding405 ₁ of the transformer 405 is connected between the input terminals401, 402 and energy is magnetically stored in the primary winding 405 ₁.A current I1 through the secondary winding 405 ₂ is zero when the switch406 is switched on, because the primary winding 405 ₁ and the secondarywinding 405 ₂ have opposite winding senses. When the switch 406 isswitched of, the primary winding transfers the energy previously storedtherein to the secondary winding 405 ₂, where a current I1 through thesecondary winding 405 ₂ flows through the rectifier circuit 10 to theoutput terminals 403, 404 and the capacitive storage element 407,respectively.

The rectifier circuit 10 may be implemented in accordance with one ofthe embodiments explained before. The rectifier circuit 10 may beconfigured to receive an external drive signal Sin. This external drivesignal Sin may be generated by the control circuit 408. According to oneembodiment, the drive signal Sin is generated such that the transistorin the rectifier circuit 10 is switched on when the switch 406 isswitched off. Further, the external drive signal Sin may be generatedsuch that the transistor in the rectifier circuit 10 is switched off,when the current I1 decreases to zero or when the switch 406 is againswitched on.

FIG. 12 illustrates a further embodiment of a power converter circuit.The power converter circuit of FIG. 12 has a two transistor forward(TTF) topology. Referring to FIG. 12, the power converter includes atransformer 505 with a primary winding 505 ₁ and a secondary winding 505₂ that have identical winding senses. The primary winding 505 ₁ isconnected between a first switch 506 ₁ and a second switch 506 ₂, withthe series circuit with the switches 506 ₁, 506 ₂ and the primarywinding 505 ₁ connected between input terminals 501, 502 for receivingan input voltage Vin. A circuit node common to the first switch 506 ₁and the primary winding 505 ₁ is coupled to the second input terminal502 via a first rectifier element 507 ₁, such as a diode. Further, acircuit node common to the primary winding 505 ₁ and the second switch506 ₂ is coupled to the first input terminal 501 through a furtherrectifier element 507 ₂, such as a diode. A series circuit with a firstrectifier circuit 10 ₁, an inductive storage element 508, and acapacitive storage element 509 is connected in parallel with thesecondary winding 505 ₂. An output voltage Vout is available betweenoutput terminals 503, 504 across the capacitive storage element 509. Afurther rectifier circuit 10 ₂ is connected in parallel with the seriescircuit with inductive storage element 508 and a capacitive storage 509.

Referring to FIG. 12, a control circuit 510 generates a drive signalS506 to the first and second switches 506 ₁, 506 ₂ that aresynchronously switched on and switched off. The drive signal S506 is apulse-width modulated (PWM) drive signal that is dependent on an outputsignal Sout. This output signal Sout represents the output voltage Vout.The control circuit 510 generates the drive signal S506 with a dutycycle such that the output voltage Vout corresponds to a predefined setvoltage.

The operating principle of the power converter circuit of FIG. 12 is asfollows: Each time the first and second switches 506 ₁, 506 ₂ areswitched on, the primary winding 505 ₁ is connected between the inputterminals 501, 502 and a current I505 ₁ flows through the primarywinding. The polarity of a voltage V505 ₂ across the secondary winding505 ₂ is as indicated in FIG. 12. This voltage causes a current I1 ₁through the first rectifier circuit 10 ₁, the inductive storage element508 and the capacitive storage element 509. When the switches 506 ₁, 506₂ are switched off, the current I505 ₁ through the primary windingcontinuous to flow by virtue of the two rectifier elements 507 ₁, 507 ₂.However, the polarity of the voltage V505 ₂ is inverted, so that thecurrent I1 ₁ through the first rectifier circuit 10 ₁ becomes zero and acurrent I1 ₂ through the second rectifier circuit 10 ₂ flows.

The first and second rectifier circuits 10 ₁, 10 ₂ may be implemented inaccordance with one of the embodiments explained before. In particular,the rectifier circuits 10 ₁, 10 ₂ may be implemented to each receive anexternal drive signal Sin₁, Sin₂ (illustrated in dashed lines in FIG.12), or may be configured to internally generate the drive signals.

FIG. 13 illustrates an further embodiment of a power converter circuit.The power converter circuit of FIG. 13 includes a phase-shiftzero-voltage switching (ZVS) full bridge topology. Referring to FIG. 13,the power converter circuit includes two half bridges each including ahigh-side switch 605 ₁, 606 ₁ and a low-side switch 605 ₂, 606 ₂connected between input terminal 601, 602 for receiving an input voltageVin. A series circuit with an inductive storage element 610 and aprimary winding 607 ₁ of a transformer 607 is connected between outputterminals of the two half bridges. The transformer 607 includes twosecondary windings, namely a first secondary winding 607 ₂, and a secondsecondary winding 607 ₃ that are inductively coupled with the primarywinding 607 ₁. The primary winding 607 ₁ and the secondary winding 607₂, 607 ₃ have identical winding senses. On the secondary side (the sidewith the secondary windings), the power converter circuit includes aseries circuit with an inductive storage element 611 and a capacitivestorage element 608. The first primary winding 607 ₂ is coupled to thisseries circuit 611, 608, through a first rectifier circuit 10 ₁, and thesecond secondary winding 607 ₃ is coupled to the series circuit 611, 608through a second rectifier circuit 10 ₂. A third rectifier circuit 10 ₃is connected in parallel with the series circuit with the inductivestorage element 611 and the capacitive storage element 608.Specifically, the inductive storage element 611 is connected to thefirst primary winding 607 ₂ through the first rectifier circuit 10 ₁ andto the second primary winding 607 ₃ through the second rectifier circuit10 ₂. A circuit node common to the first and second secondary winding607 ₂, 607 ₃ is connected to that circuit node of the capacitive storageelement 608 facing away from the inductive storage element 611 and tothe second output terminal 604, respectively.

The switches of the half-bridges are cyclically switched on and off by adrive circuit 609 dependent on an output signal Sout representing theoutput voltage Vout in accordance with a specific drive scheme. In FIG.13, reference characters S605 ₁, S605 ₂, S606 ₁, S606 ₂ denote drivesignals provided by the drive circuit 609 to the individual switches 605₁, 605 ₂, 606 ₁, 606 ₂. Each cycle in accordance with this drive schemeincludes four different phases. In a first phase, the high-side switch605 ₁ of the first half-bridge and the low-side switch 606 ₂ of thesecond half-bridge are switched on. Thus, a current I607 ₁ flows throughthe first inductive storage element 610 and the primary winding 607 ₁.Voltages V607 ₂, V607 ₃ across the secondary windings 607 ₂, 607 ₃ havepolarities as indicated in FIG. 13. The voltage V607 ₂ causes a currentI1 ₁ through the first rectifier circuit 10 ₁, the second inductivestorage element 611 and the capacitive storage element 608, while thesecond rectifier circuit 10 ₂ blocks.

In a second phase, the high side switch 605 ₁ of the first half-bridgeis switched on and the high-side switch 606 ₁ of the second half-bridgeis switched on. There may be a delay time between switching off thelow-side switch 605 ₂ of the first half-bridge and switching on thehigh-side switch 606 ₁ of the second half-bridge. During this delaytime, a freewheeling element (not illustrated) connected in parallelwith the high-side switch 606 ₁ may take the current. The switches 605₁, 605 ₂, 606 ₁, 606 ₂ may be implemented as power MOSFETs, inparticular as power MOSFETs that include an integrated body diode thatmay act as freewheeling element.

In the second phase, the voltage across the primary winding 607 ₁ andthe voltages V607 ₂, V607 ₃ across the secondary windings are zero. Thecurrent through the inductive storage element 611 continuous to flow,where the third rectifier circuit 10 ₃ takes the current through theinductive storage element 611 and the capacitive storage element 608.

In the third phase, the high-side switch 606 ₁ of the second half-bridgeand the low-side switch 605 ₂ of the first half-bridge are switched on.The voltages V607 ₂, V607 ₃ across the secondary windings 607 ₂, 607 ₃have polarities opposite to the polarities indicated in FIG. 13. In thiscase, a current flows through the second secondary winding 607 ₃, thesecond rectifier circuit 10 ₂, the inductive storage element 611 and thecapacitive storage element 608.

In the fourth phase, the low-side switch 605 ₂ of the first half-bridgeis switched off, and the half-side switch 605 ₁ of the first half-bridgeis switched on. The voltage across the primary winding 607 ₁ and thevoltage across the secondary windings 607 ₂, 607 ₃ turn to zero. Thecurrent through the second inductive storage element 611 and thecapacitive storage element 608 continuous to flow, where the thirdrectifier circuit 10 ₃ provides a current path for this current.

According to one embodiment, a timing of switching on and switching offthe individual switches of the two half-bridges is such that at leastsome of the switches are switched on and/or switched off when thevoltage across the respective switch is zero.

Each of the rectifier circuits 10 ₁, 10 ₂, 10 ₃ may be implemented inaccordance with one of the embodiments explained before. In FIG. 13,reference characters 12 ₁, 12 ₂, 12 ₃ denote first load terminals andreference characters 13 ₁, 13 ₂, 13 ₃ denote second load terminals ofthe individual rectifier circuits 10 ₁, 10 ₂, 10 ₃.

FIG. 14 illustrates a further embodiment of a power converter circuit.The power converter circuit of FIG. 14 is implemented with ahard-switching half-bridge topology. This power converter circuitincludes a half-bridge with a high-side switch 705 ₁ and a low-sideswitch 705 ₂ connected between input terminals 701, 702 for receiving aninput voltage Vin. A capacitive voltage divider 706 ₁, 706 ₂ is alsoconnected between the input terminals 701, 702. A primary winding 707 ₁of a transformer 707 is connected between an output terminal of thehalf-bridge and a center tap of the capacitive voltage divider. Asecondary winding 707 ₂ of the transformer 707 and the primary winding707 ₁ have same winding senses. A first terminal of the secondarywinding 707 ₂ is connected to a first output terminal 703 through afirst inductive storage element 708, and a second terminal of thesecondary winding 707 ₂ is connected to the first output terminal 703through a second inductive storage element 709. A capacitive storageelement 710 is connected between the first output terminal 703 and asecond output terminal 704, where an output voltage Vout is availablebetween these output terminals 703, 704. The second output terminal 704is connected to the first terminal of the secondary winding 707 ₂through a first rectifier circuit 10 ₁, and the second output terminal704 is connected to the second terminal of the secondary winding 707 ₂through a second rectifier circuit 10 ₂. The first rectifier circuit 10₁ provides a freewheeling path for a first series circuit with the firstinductive storage element 708 and the capacitive storage element 710,and the second rectifier circuit 10 ₂ provides a freewheeling path for asecond series circuit with the second inductive storage element 709 andthe capacitive storage element 710.

Each of the first and second rectifier circuit 10 ₁, 10 ₂ may beimplemented in accordance with one of the embodiments explained hereinbefore. In FIG. 14, reference characters 12 ₁, 12 ₂ denote first loadterminals and reference characters 13 ₁, 13 ₂ denote second loadterminals of the individual rectifier circuits 10 ₁, 10 ₂.

A drive circuit 610 provides drive signals S705 ₁, S705 ₂ for theswitches 705 ₁, 705 ₂ of the half-bridge dependent on an output signalSout. The output signal Sout represents the output voltage Vout. Thedrive signals S705 ₁, S705 ₂ are generated such that the output voltageVout corresponds to a predefined set value.

The operating principle of the power converter circuit of FIG. 14 is asfollows: The electrical potential at the center tap of the capacitivevoltage divider 706 ₁, 706 ₂ is somewhere between electrical potentialsat the first and second input terminals 701, 702. Just for explanationpurposes it is assumed that the electrical potential at the center tapcorresponds to half the input voltage Vin.

Each time the high-side switch 705 ₁ of the half-bridge is switched on,a voltage across the primary winding 707 ₁ is positive and a resultingvoltage V707 ₂ across the secondary winding 707 ₂ has the polarity asindicated in FIG. 14. In this case, a current flows through the firstinductive storage element 708, the capacitive storage element 707, thesecond rectifier circuit 10 ₂ and the secondary winding 707 ₂. Duringthis phase, energy is magnetically stored in the first inductive storageelement 708.

In a second phase, both switches are switched off. In this phase, thecurrent through the first inductive 708 continuous to flow, where thefirst rectifier circuit 10 ₁ connected between the second outputterminal 704 and the first inductive storage element 708 takes thecurrent.

In a third phase, low side switch 705 ₂ of the half-bridge is switchedon. A voltage across the primary winding 707 ₁ is negative in this case,and the corresponding voltage V707 ₂ across the secondary winding 707 ₂has a polarity opposite to the polarity indicated in FIG. 14. In thiscase, the current flows through the secondary winding 707 ₂, the secondinductive storage element 709, the output capacitance 710 and the firstrectifier circuit 10 ₁.

In a fourth phase, both switches 705 ₁, 705 ₂ are switched off. In thisphase, the current through the second inductive storage element 709continuous to flow, where the second rectifier circuit 10 ₂ takes thecurrent in this case.

FIG. 15 illustrates a power converter circuit according to a furtherembodiment. The power converter circuit of FIG. 15 includes an LLCresonant topology. Referring to FIG. 15, the power converter circuitincludes a half-bridge with a high-side switch 805 ₁ and a low-sideswitch 805 ₂ connected between the input terminals 801, 802 forreceiving an input voltage Vin. The power converter circuit furtherincludes a series LLC circuit with a capacitive storage element 806, aninductive storage element 807, and a primary winding 809 ₁ of atransformer 809 connected in parallel with the low-side switch 805 ₂. Afurther inductive storage element 808 is connected in parallel with theprimary winding 809 ₁. The transformer 809 includes two primarysecondary windings, namely a first secondary winding 809 ₂ and a secondsecondary winding 809 ₃ coupled to the primary winding 809 ₁ and eachhaving same winding sense as the primary winding 809 ₁. The firstsecondary winding 809 ₂ is coupled to a first output terminal 803through a first rectifier circuit 10 ₁, and the second primary winding809 ₃ is coupled to the first output terminal 803 through the secondrectifier circuit 10 ₂. A circuit node common to the first and secondsecondary windings 809 ₂, 809 ₃ is coupled to a second output terminal804. A capacitive storage element 810 is connected between the outputterminals 803, 804, where an output voltage Vout is available betweenthe output terminals 803, 804.

In FIG. 15, S805 ₁, S805 ₂ denotes drive signals for the switches 805 ₁,805 ₂ of the half-bridge. These drive signals S805 ₁, S805 ₂ aregenerated by a drive circuit 811 in accordance with an output signalSout. The output signal Sout represents the output voltage Vout. Thedrive circuit 8 is configured to generate the drive signals S805 ₁, S805₂ such that the output voltage Vout corresponds to a predefined setvalue.

In the power converter circuit of FIG. 15, the high-side switch 805 ₁and the low-side switch 805 ₂ are switched on and off alternatingly.This causes an alternating current through the primary winding 809 ₁ ofthe transformer 809. This alternating current is transferred to thesecondary side. When the alternating current through the primary winding809 ₁ has a first direction, a current on the secondary side flowsthrough the first primary winding 809 ₂ and the first rectifier circuit10 ₁ to the capacitive storage element 810 and the output terminals 803,804 respectively. When the current through the primary winding 809 ₁,has an opposite second direction, the current on the secondary sideflows through the second secondary winding 809 ₃ and the secondrectifier circuit 10 ₂ to the capacitive storage element 810 and theoutput terminals 803, 804, respectively.

In FIG. 15, reference characters 12 ₁, 12 ₂ denote first load terminalsof the first and second rectifier circuits 10 ₁, 10, and referencecharacters 13 ₁, 13 ₂ denote second load terminals of the first andsecond rectifier circuits 10 ₁, 10 ₂. Each of these rectifier circuits10 ₁, 10 ₂ may be implemented in accordance with one of the embodimentsexplained herein before.

In each of the power converter circuits explained before, a load (notillustrated) may be connected to the output terminals to receive theoutput voltage Vout.

In case one of the power converter circuits explained before, includesmore than one rectifier circuit, the individual rectifier circuits maybe implemented identically. However, it is also possible to implementtwo or more rectifier circuits in one power converter circuit withdifferent topologies.

FIG. 16 illustrates a further embodiment of a circuit arrangementincluding a rectifier circuit 10. The circuit arrangement includes inputterminals 901, 902 for receiving an input voltage Vin, a series circuitwith a load Z and a switch 903 connected between the input terminals901, 902 and a rectifier circuit 10 connected in parallel with the loadZ. The load Z is, e.g., an inductive load. That is, the load Z includesat least one inductive element or a circuit element with an inductivebehavior. The switch 903 is a low-side switch. That is, the switch 903is connected between the load Z and the terminal for the negative supplypotential or reference potential of the input voltage Vin. A circuitconfiguration as illustrated in FIG. 16 may, e.g. be implemented in acurrent controller for controlling a current through an inductive load.

The operating principle of the circuit arrangement of FIG. 16 is asfollows: Each time the switch 903 is switched on, the load Z isconnected between the input terminals 901, 902 and a current I1 flowsthrough the load Z. When the switch 903 is switched off, the current I1through the load Z by virtue of the inductive character of the loadcontinues to flow (and decreases). In this phase, the rectifier circuit10 acts as a freewheeling element and takes the current I1 flowingthrough the load Z.

The switch 903 is switched on and off by a drive signal S903 provided bya control circuit 904. According to one embodiment, the control circuit904 is configured to adjust a duty-cycle of the drive signal S903dependent on the voltage I1 through the load Z in order to control anaverage value of the current I1 through the load to correspond to apredefined set value.

FIG. 17 illustrates the circuit arrangement of FIG. 16 that includes arectifier circuit in accordance with the embodiment of FIG. 5. Theswitch 903 is implemented similar to the rectifier element 1 of therectifier circuit 10 with a first transistor 2 ₉₀₃ and with anarrangement 30 ₉₀₃ with a plurality of second transistors. In theembodiment of FIG. 17, first transistor 20903 of the switch 903 isimplemented as an n-type enhancement MOSFET. However, this is only anexample. The switch 903 could be implemented with any other type offirst transistor as well. The arrangement 30 ₉₀₃ with the secondtransistors may be implemented like the arrangement 30 with the secondtransistors 3 ₁-3 _(n) explained in connection with the rectifierelement 1 in FIG. 2 before. The operating principle of the switch 903corresponds to the operating principle of the rectifier element of FIG.2. That is, the switch 1 is in the on-state (switched on) when the firsttransistor 2 ₉₀₃ is switched on, and the switch 903 is in the off-state(switched off) when the first transistor 2 ₉₀₃ is switched off. Thedrive signal S903 received from the control circuit (not illustrated inFIG. 17) is configured to one of switch on and switch off the firsttransistor 2 ₉₀₃.

FIG. 18A illustrates one embodiment of a detection circuit 9 of therectifier circuit 10 in the circuit arrangement of FIG. 17. In FIG. 18,only some of the circuit elements of the rectifier element 1 of therectifier circuit 10 and only some of the circuit elements of the switch903 are illustrated, namely those circuit elements necessary forunderstanding the operating principle of the detection circuit 9. FIG.18 shows the first transistor 2, the body diode D2 and the optionalvoltage limiting element 7 ₀ of the rectifier element 1 and an n-thsecond transistor 3 _(n-903) of the switch 903. The function of thissecond transistor 3 _(n-903) corresponds to the function of the secondtransistor 3 _(n) illustrated in FIG. 2. Reference character 7 _(n-903)denotes the optional voltage limiting element connected in parallel withthis second transistor 3 _(n-903).

Referring to FIG. 18A, the detection circuit 9 includes an amplifier 92₄, such as an operational amplifier (OA). This amplifier 92 ₄ isoperable to evaluate a voltage across the body diode D2 of the firsttransistor 2 of the rectifier element 1 in order to determine a currentI1 through the rectifier element 1. A first load terminal 22(corresponding to the anode terminal of the body diode D2) of the firsttransistor 2 is coupled to a first terminal of the operational amplifier92 ₄ through a first resistive element 92 ₁, and the second loadterminal 23 of the second transistor 2 is coupled to the first terminalof the amplifier 92 ₄ through a second resistive element 92 ₂. Further,that load terminal of the second transistor 3 _(n-903) facing away fromthe first transistor 2 is coupled to a second terminal of the amplifier92 ₄ through a third resistive element 92 ₃. The second terminal of theamplifier 92 ₄ is coupled to the output terminal through a furtherresistive element 92 ₅. The detection signal S_(D) is available at theoutput of the amplifier 92 ₄. Optionally, buffers 92 ₆, 92 ₇, 92 ₈ areconnected between the first, second and third resistive elements and thecorresponding circuit nodes of the rectifier element 1 and the switch903. The output signal S_(D) of the amplifier 92 ₄ represents thedirection of the current I1, where the output signal S_(D) has a firstsign when the current flows in the first direction and has a second signwhen the current flows in the opposite second direction.

FIG. 18B illustrates a modification of the detection circuit 9 of FIG.18A. The detection circuit 9 of FIG. 18B includes two shunt resistors, afirst shunt resistor 92 ₉ between the first load terminal 12 of therectifier circuit 10 and the circuit node for connecting the load Zthereto, and a second shunt resistor 92 ₉ between the circuit node forconnecting the load Z thereto and the switch 903. In this detectioncircuit 9, the first input terminal (the non-inverting terminal) of theamplifier 92 ₄ is coupled to the circuit node common to the first shuntresistor 92 ₉ and the rectifier circuit via the second resistor 92 ₉ andto the circuit node common to the first shunt resistor 92 ₉ and thesecond shunt resistor 92 ₁₀ via the first resistor 92 ₁₀. Like in theembodiment of FIG. 18A, the buffers 92 ₆, 92 ₇ are optional. The secondinput terminal (the inverting terminal) of the amplifier 92 ₄ is coupledto the circuit node common to the second shunt resistor 92 ₁₀ and theswitch 903. In this detection circuit 9, the detection signal S_(D) atthe output of the amplifier 92 ₄ represents the direction of the currentI1 through the rectifier circuit 10 and the amplitude of the current I1.

FIG. 19 illustrates a further embodiment of a detection circuit 9. Thedetection circuit 9 of FIG. 19 is based on the detection circuit 9 ofFIG. 18B and further includes a differentiator 93 receiving the currentmeasurement signal at the output of the amplifier 92 ₄. In FIG. 19,reference character S92 ₄ denotes the output signal of the amplifierthat corresponds to the detection signal of FIG. 18. The differentiator93 may be implemented like a conventional differentiator. Just forillustration purposes one embodiment of the differentiator 93 isillustrated in detail in FIG. 19.

The differentiator 93 of FIG. 19 includes a further amplifier 93 ₁, suchas an operational amplifier (OA). The output of the amplifier 92 ₄ iscoupled to a first input (the inverting input in this embodiment) of thefurther amplifier 93 ₁ through a capacitive element 93 ₂. Further, theinverting input is coupled to the output through a resistor 93 ₃. Adetection signal S_(D) at the output of the differentiator 93corresponds to a voltage between the output of the further amplifier 93₁ and the second input terminal (the non-inverting input terminal inthis embodiment) of the further amplifier 93 ₁. This output signalcorresponds to a time derivative of the current measurement signal S92 ₄at the output of the amplifier 92 ₄. The time derivative of the currentmeasurement signal S92 ₄ is positive when the current I1 through therectifier circuit 1 increases, and is negative when the current throughthe rectifier circuit decreases.

The control and drive circuit 8 (not illustrated in FIG. 19) receivingthe detection signal S_(D) of FIG. 19 may be configured to detect maximaof the detection signal S_(D) and may be configured to switch on thefirst transistor 2 of the rectifier circuit 1 when the detection signalS_(D) has a positive maximum, and may be configured to switch off thefirst transistor 2 of the rectifier circuit 1 when the detection signalS_(D) has a negative maximum.

Optionally, a rectifier 94 is connected downstream the output thefurther amplifier 93 ₁. The rectifier 94 receives the detection signalS_(D) and provides a rectified detection signal |S_(D)|.

FIG. 20 illustrate a modification of the circuit arrangement of FIG. 17.In the circuit arrangement of FIG. 20, the rectifier circuit 10 isoperable to receive an external drive circuit Sin. This external drivesignal Sin is provided from a control circuit 94 through a level shifter95. The control circuit 94 may also provide the drive signal of theswitch 903. The level shifter 95 includes a series circuit with a firsttransistor 2 ₉₅ receiving the drive signal S_(in) and a plurality of n(with n>1) second transistors 3 ₁₋₉₅-3 _(n-95) connected in series withthe first transistor. The series circuit with the first transistor 2 ₉₅and the second transistors 3 ₁₋₉₅-3 _(n-95) is connected between theterminal 902 for the reference potential and the circuit node betweenthe first transistor 2 of the rectifier circuit 10 and the arrangement30 with the second transistors. Referring to FIG. 20, the firsttransistor 2 ₉₅ of the level shifter may be implemented as anenhancement MOSFET, specifically an n-type enhancement MOSFET, while thesecond transistors 3 ₁₋₉₅-3 _(n-95) may be implemented as depletionMOSFETs (or JFETs). Each of the second transistors 3 ₁₋₉₅-3 _(n-95) hasits gate terminal connected to its source terminal, wherein the sourceterminal of the 1st second transistor 3 ₁₋₉₅ is connected to the drainterminal of the first transistor. A voltage limiting element 7 ₀₋₉₅-7_(n-95), such as a Zener diode or a series circuit of Zener diodes, isconnected in parallel with the first transistor 2 ₉₅ and each of thesecond transistors 3 ₁₋₉₅-3 _(n-95).

An evaluation circuit 95 ₁-95 ₃ compares the electrical potential at theload terminal of one of the second transistors, namely the upper secondtransistor 7 _(n-95) in this embodiment, with the electrical potentialat the first load terminal of the rectifier circuit 10 and generates thedrive signal S2 for the first transistor 2 of the rectifier circuit 10dependent on the comparison. The electrical potential at the secondtransistor 7 _(n-95) is dependent on the switching state of the firsttransistor 2 ₉₅ of the level shifter 95. This electrical potential is ahigh electrical potential when the first transistor 2 ₉₅ is switched onand is a low electrical potential when the first transistor 2 ₉₅ isswitched on. Thus, by switching on and switching off the firsttransistor 2 ₉₅ different electrical potentials are generated at thesecond transistor 3 _(n-95) where this electrical potential is used togenerate the drive signal of the first transistor 2 in the rectifiercircuit 10. Referring to FIG. 20, the evaluation circuit includes anamplifier 95 ₁ with a first (non-inverting) input coupled to the firstload terminal 12 of the rectifier circuit 10, and with a second(inverting) input coupled to the load terminal (source terminal) of thesecond transistor 3 _(n-95) through a resistor 95 ₂ and coupled to theoutput through a further resistor 95 ₃. The drive signal S2 is availableat the output of the amplifier 95 ₁.

The first semiconductor device 2 and the second semiconductor devices(second transistors) 3 that are represented by circuit symbols in thefigures explained above can be implemented in many different ways. Someillustrative embodiments for implementing the second transistors 3 areexplained with reference to Figures below.

FIG. 21A shows a perspective view of one second transistor 3. FIG. 21Bshows a vertical cross sectional view and FIG. 21C shows a horizontalcross sectional view of this second transistor 3. FIGS. 21A, 21B, 21Conly show that section of the semiconductor body 100 in which the secondtransistor 3 is implemented. Active regions of the first semiconductordevice 2 and active regions of neighbouring second transistors are notshown. The second transistor 3 according to FIGS. 21A to 21C isimplemented as a MOSFET, specifically as a FINFET, and includes a sourceregion 53, a drain region 54 and a body region 55 that are each arrangedin a fin-like semiconductor section 52, which will also be referred toas “semiconductor fin” in the following. The semiconductor fin isarranged on a substrate 51. In a first horizontal direction, the sourceand drain regions 53, 54 extend from a first sidewall 52 ₂ to a secondsidewall 52 ₃ of the semiconductor fin 52. In a second directionperpendicular to the first direction the source and drain regions 53, 54are distant from one another and are separated by the body region 55.The gate electrode 56 (illustrated in dashed lines in FIG. 21A) isdielectrically insulated from the semiconductor fin 52 by a gatedielectric 57 and is adjacent to the body region 55 on the sidewalls 52₂, 52 ₃ and on a top surface 52 ₁ of semiconductor fin 52.

FIGS. 22A to 22C illustrate a further embodiment of one secondtransistor 3 implemented as a FINFET. FIG. 22A shows a perspective view,FIG. 22B shows a vertical cross sectional view in a vertical sectionplane E-E, and FIG. 22C shows a horizontal cross sectional view inhorizontal section plane D-D. The vertical section plane E-E extendsperpendicular to the top surface 52 ₁ of the semiconductor fin 52 and ina longitudinal direction of the semiconductor fin 52. The horizontalsection plane D-D extends parallel to the top surface 52 ₁ of thesemiconductor fin. The “longitudinal direction” of the semiconductor fin52 corresponds to the second horizontal direction and is the directionin which the source and drain region 53, 54 are distant from oneanother.

The transistor 3 according to FIGS. 22A to 22C is implemented as aU-shape-surround-gate-FINFET. In this transistor, the source region 53and the drain region 54 extend from the first sidewall 52 ₂ to thesecond sidewall 52 ₃ of the semiconductor fin 52 in the first horizontaldirection, and are distant from one another in the second horizontaldirection (the longitudinal direction of the semiconductor fin 52) thatis perpendicular to the first horizontal direction. Referring to FIGS.22A and 22B, the source region 53 and the drain region 54 are separatedby a trench which extends into the body region 55 from the top surface52 ₁ of the semiconductor fin and which extends from sidewall 52 ₂ tosidewall 52 ₃ in the first horizontal direction. The body region 55 isarranged below the source region 53, the drain region 54 and the trenchin the semiconductor fin 52. The gate electrode 56 is adjacent to thebody region 55 in the trench and along the sidewalls 52 ₂, 52 ₃ of thesemiconductor fin 52 and is dielectrically insulated from the bodyregion 55 and the source and drain regions 53, 54 by the gate dielectric57. In an upper region of the trench, which is a region in which thegate electrode 56 is not arranged adjacent to the body region 55, thegate electrode 56 can be covered with an insulating or dielectricmaterial 58.

The second transistors of FIGS. 21A to 21C and of FIGS. 22A to 22C are,for example, implemented as depletion transistors, such as an n-type ora p-type depletion transistors. In this case, the source and drainregions 53, 54 and the body region 55 have the same doping type. Thebody region 55 usually has a lower doping concentration than the sourceand drain regions 53, 54. The doping concentration of the body region 55is, e.g., about 2E18 cm⁻³. In order to be able to completely interrupt aconducting channel in the body region 55 between the source region 53and the drain region 54, the gate electrode 56 along the sidewalls 52 ₂,52 ₃ of the semiconductor fin 52 completely extends along thesemiconductor fin 52 in the second horizontal direction (thelongitudinal direction). In the vertical direction the gate electrode 56along the sidewalls 52 ₂, 52 ₃ extends from the source and drain regions53, 54 to at least below the trench.

Referring to FIGS. 21A and 22A, the source region 53 is connected to thefirst load terminal (source terminal) 32, the drain region 54 isconnected to the second load terminal (drain terminal) 33, and the gateelectrode 56 is connected to the control terminal (gate terminal) 31.These terminals are only schematically illustrated in FIGS. 21A and 22A.

A thickness of the semiconductor fin 52, which is the dimension of thesemiconductor fin in the first horizontal direction, and the dopingconcentration of the body region 55 are adjusted such that a depletionregion controlled by the gate electrode 56 can extend from sidewall 52 ₂to sidewall 52 ₃ in order to completely interrupt a conducting channelbetween the source and the drain region 53, 54 and to switch the secondtransistor 3 off. In an n-type depletion MOSFET a depletion regionexpands in the body region 55 when a negative control (drive) voltage isapplied between the gate electrode 56 and the source region 53 orbetween the gate terminal 31 and the source terminal 32, respectively.Referring to the explanation provided with reference to FIG. 1, thisdrive voltage is dependent on the load voltage of the firstsemiconductor device 2, or is dependent on the load voltage of anotherone of the second transistors 3. How far the depletion region expandsperpendicular to the sidewalls 52 ₂, 52 ₃ is also dependent on themagnitude of the control voltage applied between the gate terminal 31and the source terminal 32. Thus, the thickness of the semiconductor fin52 and the doping concentration of the body region 55 are also designeddependent on the magnitude of the control voltage that can occur duringthe operation of the semiconductor device arrangement.

Implementing the FINFETs illustrated in FIGS. 21A to 21C and 22A to 22Cas U-shape-surround-gate-FINFET, in which the channel (body region) 55has an U-shape and the gate electrode 56 is also arranged on sidewalls52 ₂, 52 ₃ and on a top surface 52 ₁ of the semiconductor fin 130 isonly an example. These FINFETs could also be modified (not illustrated)to have the gate electrode 56 implemented with two gate electrodesections arranged on the sidewalls 52 ₂, 52 ₃ but not on the top surface52 ₁ of the semiconductor fin 52. A FINFET of this type can be referredto as double-gate FINFET. Each of the FINFETs explained above and belowcan be implemented as U-shape-surround-gate-FINFET or as double-gateFINFET. It is even possible to implement the individual secondtransistors 3 as different types of MOSFETs or FINFETs in one integratedcircuit.

Each of the second transistors 3 and the first semiconductor device 2can be implemented as FINFET. These individual FINFETs can beimplemented in different ways to form the semiconductor arrangement 1.

FIG. 23 illustrates a vertical cross sectional view of a semiconductorfin 52 in which active regions (source, drain and body regions) of afirst semiconductor device 2 and of n second transistors 3 are arranged.In this embodiment, the first semiconductor device 2 and the secondtransistors are implemented as U-shape-surround-gate FINFET or asdouble-gate FINFET. In FIG. 23, like reference numbers are used todenote like features as in FIGS. 21A to 21C and 22A to 22C. In FIG. 23the reference numbers of like features of the different secondtransistors 3 ₁-3 _(n) have different indices (1, 2, 3, n).

Referring to FIG. 23, the active regions of neighboring secondtransistors 3 are insulated from each other by dielectric layers 59which extend in a vertical direction of the semiconductor fin 52. Thesedielectric layers 59 may extend down to or down into the substrate 51.Further, the dielectric layers 59 extend from sidewall to sidewall ofthe semiconductor fin 52. However, this is out of view in FIG. 23. Theactive regions of the first semiconductor device 2 are dielectricallyinsulated from active regions of the 1st second transistor 3 ₁ by afurther dielectric layer 66 that also extends in a vertical direction ofthe semiconductor fin 52. In the first semiconductor device 2, a sourceregion 61 and a drain region 62 are separated by a body region 63. Thegate electrode 64 that is arranged in the trench (and the position ofwhich at the sidewalls of the semiconductor fin is illustrated by dottedlines), extends from the source region 61 along the body region 63 tothe drain region 62. The source region 61 is connected the first loadterminal 22 that forms the first load terminal 12 of the semiconductorarrangement 1, the drain region 62 is connected to the second loadterminal 23, and the gate electrode 64 is connected to the controlterminal 21 that forms the control terminal 11 of the semiconductorarrangement 1. The body region 63 is also connected to the first loadterminal 22.

The first semiconductor device 2 is, for example, implemented as anenhancement MOSFET. In this case, the body region 63 is dopedcomplementarily to the source and drain regions 61, 62. In an n-typeMOSFET, the source and drain regions 61, 62 are n-doped while the bodyregion 63 is p-doped, and in a p-type MOSFET, the source and drainregions 61, 62 are p-doped while the body region 63 is n-doped.

According to one embodiment, the substrate 51 is doped complementarilyto the active regions of the second transistors 3 and to the source anddrain regions 61, 62 of the first semiconductor device 2. In this case,there is a junction isolation between the individual second transistors3. According to a further embodiment (illustrated in dashed lines), thesubstrate is an SOI substrate and includes a semiconductor substrate 51₁ and an insulation layer 51 ₂ on the semiconductor substrate 51 ₁. Thesemiconductor fin 52 is arranged on the insulation layer. In thisembodiment, there is a dielectric layer between the individual secondtransistors 3 in the substrate 51.

According to yet another embodiment, illustrated in FIG. 24, thesubstrate 51 has the same doping type as the active regions of thesecond transistors 3 and as the source and drain regions 61, 62 of thefirst semiconductor device 2. In this embodiment, the gate electrode 56of the first semiconductor device 2 extends to the substrate, so thatthere is a conducting path in the body region between the source region61 and the substrate 51 when the first semiconductor device 2 is in theon-state. Further the substrate is connected to the second load terminal13 of the semiconductor arrangement through a contact region 67 of thesame doping type as the substrate 51. The contact region 67 is morehighly doped than the substrate 51 and extends from the first surface 52₁ of the semiconductor fin 52 to the substrate. The contact region 67may adjoin the drain region 54 _(n) of the n-th second transistor 3. Thecontact region 67 is optional. A connection between the second loadterminal 13 and the substrate 51 could also be provided through thedrain and body regions 54 _(n), 55 _(n) of the second transistor 3 _(n).

In the semiconductor arrangement of FIG. 24, the substrate 51 forms acurrent path that is parallel to the current path through the secondtransistors 3 or that is parallel to the ADZ. The substrate 51 issimilar to the drift region in a conventional power transistor. In thisembodiment, the body regions 55 of the individual second transistors 3are coupled to the drift region 51.

According to further embodiment (illustrated in dashed lines in FIG. 24)the substrate 51 includes a semiconductor layer 51 ₃ doped complementaryto remaining sections of the substrate 51 and to the body regions 55 ofthe second transistors 3. This layer 51 ₃ is arranged between the bodyregions 55 of the second transistors 3 and those sections of thesubstrate acting as a drift region and provides a junction insulationbetween the individual second transistors 3 in the substrate 51.

The semiconductor arrangement 1 of FIG. 3 with the diode 2 connected inseries with the second transistors 3 can easily be obtained from thearrangements illustrated in FIGS. 21 and 22 by either connecting thecontrol terminal of the first semiconductor device to the first loadterminal 22 or by let the control terminal 21 floating. In this case,only the body diode of the MOSFET, which is the diode formed by thepn-junction between the body region 63 and the drain region 65 is activebetween the first and second load terminals 22, 23 of the secondsemiconductor device.

Each of the first semiconductor device 2 and the second transistors 3(referred to as devices in the following) may include a plurality ofidentical cells (transistor cells) that are connected in parallel. Eachof these cells can be implemented like the first semiconductor device 2or like the second transistors 3, respectively, illustrated in FIGS. 21and 22. Providing a plurality of cells connected in parallel in onedevice can help to increase the current bearing capability and to reducethe on-resistance of the individual device.

FIG. 25 illustrates a top view on a semiconductor arrangement accordingto a first embodiment which includes a first semiconductor device 2 anda plurality of second transistors 3, with each of these devices having aplurality (from which three are illustrated) cells connected inparallel. The individual cells of one device are implemented indifferent semiconductor fins 52 _(I), 52 _(II), 52 _(III). Each of thesecells has a source region 61, 53 that is additionally labeled with “S”in FIG. 25, and a drain region 62, 54 that is additionally labeled with“D” in FIG. 25. The cells of one device are connected in parallel byhaving the source regions of the one device connected together and byhaving the drain regions of the one device connected together. Theseconnections as well as connections between the load terminals of thedifferent devices are schematically illustrated in bold lines in FIG.25. Connections between the control terminals (gate terminals) and theload terminals of the different devices are not illustrated in FIG. 25.The connections between the cells and the different devices can beimplemented using conventional wiring arrangements arranged above thesemiconductor body and contacting the individual active regions (sourceand drain regions) through vias. Those wiring arrangements are commonlyknown so that no further explanations are required in this regard. Theindividual cells of one device 2, 3 ₁, 3 ₂, 3 ₃, 3 _(n) have a commongate electrode 64, 56 ₁, 56 ₂, 56 ₃, 56 _(n) arranged in the U-shapedtrenches of the individual semiconductor fins and in trenches betweenthe individual fins. These “trenches between the fins” are longitudinaltrenches along the fins. All gates 64, 56 ₁, 56 ₂, 56 ₃, 56 _(n) areelectrically isolated from each other by a dielectric 66 and 59.

FIG. 26 illustrates a further embodiment for implementing one secondtransistor 3 with a plurality of transistor cells. In this embodiment, aplurality of transistor cells of the second transistor 3 are implementedin one semiconductor fin. In the longitudinal direction of thesemiconductor fin 52, source and drain regions 53, 54 are arrangedalternatingly with a source region 53 and a neighboring drain region 54being separated by one (U-shaped) trench that accommodates the gateelectrode 56. The source regions 53 are connected to the first loadterminal 22, and the drain regions 54 are connected to the second loadterminal 23, so that the individual transistor cells are connected inparallel. The gate electrode 56 is common to the individual transistorcells and extends along the sidewalls of the semiconductor fin 52 in thelongitudinal direction. Each source region 53 and each drain region 54(except for the source and drain regions arranged at the longitudinalends of the semiconductor fin 52) is common to two neighboringtransistor cells.

The concept of providing several transistor cells in one semiconductorfin explained with reference to FIG. 26 is, of course, also applicableto the implementation of the first semiconductor device 2.

Referring to FIGS. 27A to 27C, one second transistor 3 may include aplurality of semiconductor fins 52 _(IV), 52 _(V), 52 _(VI), 52 _(VII),with each semiconductor fin 52 _(IV)-52 _(VII) including a plurality oftransistor cells (one of these cells is highlighted by a dashed anddotted frame in FIG. 27A). FIG. 27A shows a top view of one secondtransistor 3, FIG. 27B shows a vertical cross sectional view in asection plane F-F cutting through source regions in different fins, andFIG. 27C shows a vertical cross sectional view in a section plane G-Gcutting through the trenches with the gate electrode 56 in differentfins. Referring to FIG. 27A, the source regions of the individualtransistor cells are connected to the first load terminal 22 and thedrain regions of the individual transistor cells are connected to thesecond load terminal 23 so that the individual transistor cells areconnected in parallel. These connections are only schematicallyillustrated in FIG. 27A.

The concept of providing a plurality of semiconductor fins with eachsemiconductor fin including a plurality of transistor cells explainedwith reference to FIGS. 27A to 27C is, of course, also applicable to theimplementation of the first semiconductor device 2.

Although only 20 transistor cells are illustrated in FIG. 27A, namelyfive cells in each of the four semiconductor fins 52 _(IV)-52 _(VII),one second transistor 3 or the first semiconductor device 2 may includeup to several thousand or even up to several ten or several hundredmillion transistor cells connected in parallel. The individualtransistor cells form a matrix of transistor cells that are connected inparallel. A device (first semiconductor device 2 or second transistor 3)having a plurality of transistor cells arranged in a matrix will bereferred to as matrix device in the following.

FIG. 28 illustrates how second transistors implemented as matrix devicescan be connected in series. For illustration purposes, only two secondtransistors 3 _(i), 3 _(i+1) are shown in FIG. 28. For connecting thesetwo transistors in series, the source regions of the second transistor 3_(i+1) are connected to the drain regions of the transistor 3 _(i). Thesource regions of the second transistor 3 _(i) are connected to thedrain regions of second transistors (not illustrated), and the drainregions of the second transistor 3 _(i+1) are connected to the sourceregions of second transistors 3 _(i+2) (not illustrated).

FIG. 29 illustrates a vertical cross sectional view of a transistor cellof the first transistor 2 according to a further embodiment. Several ofthe transistor cells of FIG. 29 may be connected in parallel to form thefirst transistor 2. The transistor cell of FIG. 29 is implemented with aplanar gate electrode 64. The gate electrode 64 is arranged above thefirst surface 101 of the semiconductor body 100 and is dielectricallyinsulated from the body region 63 by the gate dielectric 65. The sourceand drain regions 61, 62 are arranged in the region of the first surface101 and are distant in a lateral direction of the semiconductor body100. The body region 63 adjoins the substrate 51, where the substrate 51may be implemented in accordance with one of the embodiments explainedbefore. Further, the body region 63 is electrically connected to thesource terminal 22. Referring to FIG. 19, the vertical dielectric layer66 may extend through the body region 63 to or into the substrate 51.The vertical dielectric layer 66 may surround the body region 63 in ahorizontal plane of the semiconductor body 100, which is a planeperpendicular to the section plane illustrated in FIG. 19. The firsttransistor 2 of FIG. 19 may be implemented as an enhancement transistor.In this case, the body region 63 is doped complementary to the sourceand drain regions 61, 62. Concerning the doping types of the individualdevice regions reference is made to the embodiments explained before.

According to one embodiment, there is a pn-junction between the bodyregion 63 and the substrate 51. This pn-junction can be formed byimplementing the body region 63 and the substrate 51 as complementarilydoped regions. Alternatively, a semiconductor region 55′ of the samedoping type as the source and drain region 53, 54 is arranged betweenthe body region 55 and the substrate 51. This optional semiconductorregion 55′ may be connected to the source region 53 (as schematicallyillustrated in dashed lines in FIG. 30).

FIG. 30 illustrates a vertical cross sectional view of a transistor cellof one second transistor 2 according to a further embodiment. Several ofthe transistor cells of FIG. 20 may be connected in parallel to form onesecond transistor 3. The transistor cell of FIG. 20 is implemented witha planar gate electrode 56. The gate electrode 56 is arranged above thefirst surface 101 of the semiconductor body 100 and is dielectricallyinsulated from the body region 55 by the gate dielectric 57. The sourceand drain regions 53, 54 are arranged in the region of the first surface101 and are distant in a lateral direction of the semiconductor body100. The body region 55 adjoins a layer of same doping as source anddrain and is connected to source. This layer adjoins the substrate 51,where the substrate 51 may be implemented in accordance with one of theembodiments explained before. Further, the body region 55 iselectrically connected to the source terminal 32. Referring to FIG. 30,the vertical dielectric layer 59 may extend through the body region 55to or into the substrate 51. The vertical dielectric layer 59 maysurround the body region 55 in a horizontal plane of the semiconductorbody 100, which is a plane perpendicular to the section planeillustrated in FIG. 20.

The second transistor 3 of FIG. 30 may be implemented as a depletiontransistor. In this case, the body region 55 is doped complementary tothe source and drain regions 53, 54 and includes a channel region 55′ ofthe same doping type as the source and drain regions 53, 54 along thegate dielectric 57. The channel region 55′ extends from the sourceregion 53 to the drain region 54. In an n-type depletion transistor, thesource region 53, the drain region 54 and the channel region 55′ aren-doped while the body region is p-doped. In a p-type depletiontransistor, the doping types of these device regions are complementaryto those in an n-type transistor.

According to one embodiment, there is a pn-junction between the bodyregion 55 and the substrate 51. This pn-junction can be formed byimplementing the body region 55 and the substrate 51 as complementarilydoped regions. Alternatively, a semiconductor region 63′ of the samedoping type as the source and drain region 61, 62 is arranged betweenthe body region 63 and the substrate 51. This optional semiconductorregion 63′ may be connected to the source region 61 (as schematicallyillustrated in dashed lines in FIG. 29).

FIG. 31 illustrates a further embodiment of a rectifier circuit 10 witha first semiconductor device 2 and a plurality of second semiconductordevices 3 ₁-3 _(n) that is configured to “automatically” conduct whenthe voltage V1 between the first and second load terminals 12, 13 hasthe first polarity and to block when this voltage V1 has the secondpolarity. The rectifier circuit 10 of FIG. 31 is a modification of therectifier circuit of FIGS. 8A and 8B. The arrangement 30 with the secondsemiconductor devices 3 ₁-3 _(n) of FIG. 31 corresponds to thearrangements 30 explained with reference to FIGS. 8A and 8B. That is,each of the second semiconductor devices 3 ₁-3 _(n) connected in serieswith the first semiconductor device 2 is configured to receive as adrive voltage either a load path voltage of at least one secondsemiconductor device 3 ₁-3 _(n), or at least a load path voltage of thefirst semiconductor device 2. In the embodiment of FIG. 31 the 1stsecond semiconductor device 3 ₁ receives the load path voltage V_(DS2)of the first semiconductor device 2 as a drive voltage, and each of theother second semiconductor devices 3 ₂-3 _(n) receives as a drivevoltage the load path voltage of one neighboring second semiconductordevice. That is, a 2nd second semiconductor device 3 ₂ receives the loadpath voltage of the 1st second semiconductor device 3 ₁ as a drivevoltage, and so on. However, this specific topology is only an example.The arrangement 30 could easily be modified such that at least some ofthe second semiconductor devices 3 ₁-3 _(n) receive as a drive voltagethe sum of the load path voltages of two or more neighboring secondsemiconductor devices.

Like in the embodiments explained hereinbefore, the rectifier elements 7₀-7 _(n) that can be implemented as Schottky diodes, Avalanche or Zenerdiodes and that are connected in parallel with the first semiconductordevice 2 and the second semiconductor devices 3 ₁-3 _(n) are optional.

According to one embodiment, the first semiconductor device 2 is atransistor, in particular a field-effect transistor, of a firstconduction type, and the second semiconductor devices 3 ₁-3 _(n) aretransistors, in particular field-effect transistors of a secondconduction type complementary to the first conduction type. Just forexplanation purposes, it is assumed that the first conduction type is ap-type and that the second conduction type is an n-type. However, theoperating principle explained below applies to a rectifier circuit withan n-type first semiconductor device 2 and with p-type secondsemiconductor devices 3 ₁-3 _(n) as well. According to one embodiment,the first semiconductor device 2 is a MOSFET (Metal-Oxide-SemiconductorField-Effect Transistor), in particular an enhancement MOSFET with athreshold voltage of substantially 0V, and the second semiconductordevices 3 ₁-3 _(n) are depletion MOSFETs or JFETs (Junction Field-EffectTransistors), HEMTs (High-Electron-Mobility Transistors) or nanotubes.

For explanation purposes it is assumed that the first semiconductordevice 2 is a p-type MOSFET and that the second semiconductor devices 3₁-3 _(n) are n-type MOSFETs or n-type JFETs, HEMTs or nanotubes.Referring to FIG. 31, a source terminal of the second semiconductordevice 2 is connected to the second semiconductor devices arrangement30. That is, the source terminal 22 of the second semiconductor device 2is connected to a source terminal 32 ₁ of the first 1st secondsemiconductor device 3 ₁. A drain terminal 23 of the secondsemiconductor device 2 is connected to the first load terminal 12 of therectifier circuit. The second semiconductor device 2 receives as a drivevoltage the load path voltage of at least one second semiconductordevice 3 ₁-3 _(n). In the present embodiment, the second semiconductordevice 2 receives as a drive voltage the load path voltage of the 1stsecond semiconductor device 3 ₁. For this, a gate terminal 21 of thesecond semiconductor device 2 is connected to a circuit node common tothe load paths of the 1st second semiconductor device 3 ₁ and the secondsemiconductor device 32. According to a further embodiment (notillustrated in FIG. 31) the second semiconductor device 2 receives as adrive voltage the load path voltages of two or more of the secondsemiconductor devices 3 ₁-3 _(n). For this, the gate terminal 21 of thesecond semiconductor device 2 is connected to a circuit node common tothe load paths of another pair of second semiconductor devices.

FIG. 32 schematically shows characteristic curves of the secondsemiconductor device 2 when implemented as a p-type MOSFET with athreshold voltage of substantially 0V. FIG. 32 shows the load current(drain-source current) I_(DS2) of the second semiconductor device 2dependent on the drive voltage (gate-source voltage) V_(GS2). Accordingto FIG. 32, the load current I_(DS2) increases, beginning at V_(GS)=0,as the magnitude of the drive voltage V_(GS) increases. Referring toFIG. 32, the p-type MOSFET 2 conducts when the drive voltage V_(GS2) isnegative, that is when the gate potential (the electrical potential atthe gate terminal 21) is below the source potential (the electricalpotential at the source terminal 22). The drain-source current I_(DS2)is negative, that is the current flows in the direction opposite to thedirection indicated in FIG. 31.

The operating principle of the rectifier circuit 10 of FIG. 31 is asfollows. When the voltage V1 between the first and second load terminals12, 13 is zero, so that the electrical potentials at each of the circuitnodes of the rectifier circuits 10 are zero, the second semiconductordevice 2 and the third semiconductor devices 3 ₁-3 _(n) are switched on(conducting). However, a load current I1 through the rectifier circuit10 is zero. As the voltage V1 increases to a positive voltage level (avoltage level with the first polarity) a load current I1 flows throughthe rectifier circuit 10 in a direction as indicated in FIG. 31. Due tothe inevitable on-resistances of the first semiconductor device 2 andthe second semiconductor devices 3 ₁-3 _(n) voltage levels of load pathvoltages V_(DS2) and V_(DS31)-V_(DS3n) of the first semiconductor device2 and of the second semiconductor devices 3 ₁-3 _(n) are different fromzero and have polarities as indicated in FIG. 31 when a load current I1flows through the rectifier circuit 10. In the embodiment of FIG. 31,the load path voltage V_(DS31) of the second semiconductor device 3 ₁causes the gate-source voltage V_(GS2) to become negative, and causesthe first semiconductor device 2 to increase its conductivity.

When the voltage V1 has the second polarity (a polarity opposite to thepolarity indicated in FIG. 31) the gate-source voltage V_(GS2) of thesecond semiconductor device 2 becomes positive, so that the firstsemiconductor device 2 switches off. As the voltage V1 increases, theload path voltage V_(DS2) of the second semiconductor device 2 increases(and has a polarity opposite to the polarity indicated in FIG. 31) untilit reaches the threshold voltage of the second semiconductor device 3 ₁.When the second semiconductor device 3 ₁ switches off, the load pathvoltage V_(DS31) of the second semiconductor device 3 ₁ increases untilit reaches the threshold voltage of the second semiconductor device 3 ₂,and so on.

Thus, the rectifier circuit 10 of FIG. 31 automatically conducts acurrent when the voltage V1 has the first polarity, and automaticallyblocks when the voltage V1 has the second polarity. The rectifiercircuit 10 of FIG. 31 can be used in each of the application circuitsexplained hereinbefore. Further, the individual semiconductor devices ofthe rectifier circuit 10 of FIG. 31 can be implemented as explained withreference to FIGS. 21A to 30 explained hereinbefore.

FIG. 33 shows an electronic circuit that includes the rectifier circuit10 of FIG. 31 and that additionally includes a switching element 24connected in parallel with the first semiconductor device 2. Theswitching element is implemented as a transistor of the secondconduction type, specifically as an n-type MOSFET 24 in the embodimentof FIG. 33. This transistor 24 has a drain terminal connected to thesecond semiconductor devices arrangement 30 and has its source terminalconnected to the first load terminal 12. In this embodiment, the furthertransistor 24 can be switched on and off independent of the firstsemiconductor device 2, wherein in the on-state the further transistordevice 24 bypasses the load path of the first semiconductor device 2.Thus, the electronic circuit of FIG. 33 can conduct a current when thevoltage V1 has the second polarity and when the further transistor 24 isswitched on. When the further transistor 24 is switched off, and thevoltage V2 has the second polarity, the rectifier circuit 10 blocks inthe way explained with reference to FIG. 31 before. When the voltage V1has the first polarity, the rectifier circuit 10 conducts a current. Inthis case, the first semiconductor device 2 bypasses an internal bodydiode (not illustrated) of the further transistor 24.

Modifications of the rectifier circuit 10 of FIG. 31 are explained withreference to FIGS. 34 to 36 below. Each of these rectifier circuits 10can be implemented together with a further transistor corresponding tothe further transistor 24 of FIG. 33.

The rectifier circuit of FIG. 34 is based on the rectifier circuit ofFIG. 31 and additionally includes a resistor 25 connected in series withthe first semiconductor device 2 and between a first semiconductordevice 2 and the second semiconductor devices arrangement 30. The gateterminal of the first semiconductor device 2 is connected to a circuitnode common to the resistor 25 and the second semiconductor devicesarrangement 30. In this embodiment, the gate-source voltage V_(GS2)corresponds to a voltage V25 across the resistor 25, wherein thisvoltage V25 increases when the voltage V1 has the first polarity andwhen the current I1 increases. That is, the first semiconductor device 2receives as a drive voltage at least the voltage across the resistor 25.According to a further embodiment, illustrated in dotted lines, the gateterminal of the first semiconductor device 2 is connected to a circuitnode common to load paths of two second semiconductor devices asexplained with reference to FIG. 31.

FIG. 35 illustrates a modification of the rectifier circuit of FIG. 34.In the rectifier circuit of FIG. 35 a transistor 26 of the secondconductivity type is connected between the first semiconductor device 2and the second semiconductor devices arrangement 30. In the presentembodiment, the transistor 26 is an n-type MOSFET that has a sourceterminal 28 connected to the source terminal 22 of the firstsemiconductor device 2, and that has a drain terminal 29 connected tothe second semiconductor devices arrangement 30. A gate terminal 27 ofthe transistor 26 is connected to the first load terminal 12. Thethreshold voltage of the transistor 26 is substantially 0V.

The operating principle of the rectifier circuit 10 of FIG. 35 is asfollows. As the voltage V1 is zero, the individual semiconductor devicesin the rectifier circuit 10 are conducting, but the current I1 is zero.As the voltage V1 increases and has the first polarity, a current I1flows in a direction as indicated in FIG. 35. The transistor 26 receivesthe load path voltage V_(DS2) of the first semiconductor device 2 as adrive voltage, wherein the transistor 26 increases its conductivity asthe load path voltage V_(DS2) increases.

When the voltage V1 has the second polarity, the second semiconductordevice 2 switches off as explained with reference to FIG. 31 before.When the first semiconductor device switches off, the load path voltagehas a polarity opposite to the polarity indicated in FIG. 35 and themagnitude of the load path voltage increases. This load path voltageswitches off the transistor 26 so that the overall voltage across thefirst semiconductor device 2 and the transistor 26 increases as thevoltage V1 increases. The second semiconductor device 3 ₁ receives thevoltage across the first semiconductor device 2 and the transistor 26 asa drive voltage in the present embodiment.

Referring to FIG. 35, the first semiconductor device 2 receives as thedrive voltage V_(GS2) the load path voltage V_(DS26) of the transistor26. However, this is only an example. According to a further embodiment(illustrated in dotted lines in FIG. 35) the first semiconductor device2 receives the load path voltage V_(DS26) of the transistor 26 plus theload path voltage of at least one of the second semiconductor devices 3₁-3 _(n) as the drive voltage V_(GS2).

FIG. 36 illustrates a further embodiment of the rectifier circuit 10.The rectifier circuit 10 of FIG. 36 is based on the rectifier circuit ofFIG. 31 and additionally includes a voltage divider circuit connectedbetween the first load terminal 12 and the second load terminal 13 andconfigured to drive the first semiconductor device 2. The voltagedivider circuit is implemented like the rectifier circuit of FIG. 8A andincludes a rectifier element 102, such as a diode, and a secondsemiconductor devices arrangement 130 with a plurality of secondsemiconductor devices 103 ₁-103 _(n) connected in series with therectifier element 102. Optionally, rectifier elements, such as Schottkydiodes, Avalanche or Zener diodes, 107 ₀-107 _(n) are connected inparallel with the second semiconductor devices 103 ₁-103 _(n) and therectifier element 102. The second semiconductor devices arrangement 130can be implemented as explained with reference to the secondsemiconductor devices arrangement 30 hereinbefore. The secondsemiconductor devices arrangement 130 of the voltage divider can beimplemented like the semiconductor devices arrangement 30. However, itis also possible to implement these two second semiconductor devicesarrangements 130, 30 differently.

Optionally, a resistor 104 is connected between the rectifier element102 and the ADR 130. The operating principle of the rectifier circuit 10of FIG. 36 is as follows. For explanation purposes it is assumed thatthe second semiconductor devices 103 ₁-103 _(n) have the sameconductivity type as the second semiconductor devices 3 ₁-3 _(n) of theADR 30. The voltage divider circuit conducts when the voltage V1 has thefirst polarity. In this case, a voltage drop across the rectifierelement 102 and the optional resistor 104 switches on the firstsemiconductor device 2. According to one embodiment, the rectifierelement 102 and the ADR130 are implemented such that the voltage V1substantially drops across the rectifier element 102 and the optionalresistor 104.

When the voltage V2 has the second polarity, the voltage divider circuitblocks, wherein a voltage V102 across the rectifier element increasesuntil the threshold voltage of the second semiconductor device 103 ₁directly connected to the rectifier element 102 or the optional resistor104 switches off. In this operation state, the ADR 130 protects therectifier element 102 against high voltages. However, a voltage dropacross the rectifier element 102 is sufficiently high to switch off thefirst semiconductor device 2.

A conventional MOSFET that can be used as a synchronous rectifier can becharacterized by the following parameters, the on-resistance R_(ON), thevoltage blocking capability (breakthrough voltage) V_(BR), the outputcharge Q_(OSS) stored in the output capacitance of the MOSFET when theMOSFET is in the off-state, and the electrical charge Q_(RR) stored inthe MOSFET when the body diode is conducting. Q_(RR) results from acharge carrier plasma that is generated in the MOSFET when the bodydiode is forward biased.

The charge C_(OSS) stored in the output capacitance C_(OSS) is given as:

$\begin{matrix}{Q_{OSS} = {\int_{V = 0}^{VBR}{C_{OSS}{\mathbb{d}V}}}} & (1)\end{matrix}$

where VBR is the breakthrough voltage of the MOSFET, and C_(OSS) is theoutput capacitance that is given by the gate-drain capacitance C_(GD)and the drain-source capacitance C_(DS). These parameters (Q_(OSS),Q_(RR), R_(ON)) are commonly known and are, for example, described inGörgens, Lutz; Siemieniec, Ralf; Sanchez, Juan Miguel Martinez, “MOSFETTechnology as a Key for High Power Density Converters,” PowerElectronics and Motion Control Conference, 2006. EPE-PEMC 2006. 12thInternational, pp. 1968-1973, Aug. 30, 2006-Sep. 1, 2006. Usually, a lowon-resistance R_(ON) results in a high bipolar charge Q_(RR) and a highoutput charge, and a high voltage blocking capability V_(BR) results ina high on-resistance R_(ON). Thus. The performance of a MOSFET can,therefore, be expressed by a figure figure of merit (FOM) that takesinto account the product R_(ON)×(Q_(RR)+Q_(OSS)), and the reciprocal(1/V_(BR)) of the voltage blocking capability.

Each of the semiconductor arrangements explained herein before that canbe used as a synchronous recitfier has an on-resistance R_(ON)corresponding to an on-resistance of a MOSFET, an output charge Q_(OSS)corresponding to the output charge of a MOSFET, a bipolar charge Q_(RR)corresponding to the bipolar charge of a MOSFET, and a voltage blockingcapability, so that these semiconductor arrangements can becharacterized by the same FOM. Compared with a conventional MOSFET, asemiconductor arrangement with the first semiconductor device 2 (such asa diode or a MOSFET), and with the plurality of second semiconductordevices 3 ₁-3 _(n) can be implemented with a lower on-resistance R_(ON)at a given voltage blocking capability V_(BR) as compared with aconventional MOSFET. A suitable FOM_(SR) to characterize thesemiconductor arrangements explained before is, for example,

$\begin{matrix}{{FOM}_{SR} = {\frac{{R_{ON}\lbrack{mOhm}\rbrack} \cdot {\left( {Q_{RR} \cdot Q_{OSS}} \right)\lbrack{nC}\rbrack}}{\left( V_{BR} \right)^{1.5}}.}} & (2)\end{matrix}$

According to one embodiment, each of the semiconductor arrangementsexplained before with one first semiconductor device 2 and a pluralityof second semiconductor devices 3 ₁-3 _(n) can be implemented so thatFOM_(SR) is below 3, below 2, below 1.5, below 1.2, or even below 1.

Although various exemplary embodiments of the invention have beendisclosed, it will be apparent to those skilled in the art that variouschanges and modifications can be made which will achieve some of theadvantages of the invention without departing from the spirit and scopeof the invention. It will be obvious to those reasonably skilled in theart that other components performing the same functions may be suitablysubstituted. It should be mentioned that features explained withreference to a specific figure may be combined with features of otherfigures, even in those cases in which this has not explicitly beenmentioned. Further, the methods of the invention may be achieved ineither all software implementations, using the appropriate processorinstructions, or in hybrid implementations that utilize a combination ofhardware logic and software logic to achieve the same results. Suchmodifications to the inventive concept are intended to be covered by theappended claims.

Spatially relative terms such as “under”, “below”, “lower”, “over”,“upper” and the like, are used for ease of description to explain thepositioning of one element relative to a second element. These terms areintended to encompass different orientations of the device in additionto different orientations than those depicted in the figures. Further,terms such as “first”, “second”, and the like, are also used to describevarious elements, regions, sections, etc. and are also not intended tobe limiting. Like terms refer to like elements throughout thedescription.

As used herein, the terms “having”, “containing”, “including”,“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

It is to be understood that the features of the various embodimentsdescribed herein may be combined with each other, unless specificallynoted otherwise.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A circuit arrangement, comprising: a plurality ofsemiconductor devices connected in series between load terminals of arectifier circuit, wherein the plurality of semiconductor devices arearranged such that one of the plurality of semiconductor devices isactively controlled by a drive voltage and each remaining one of theplurality of semiconductor devices is controlled by a load path voltageof at least one other semiconductor device of the plurality ofsemiconductor devices; wherein the one of the plurality of semiconductordevices actively controlled by the drive voltage is implemented as atransistor of a first conduction type, and wherein each of the remainingones of the plurality of semiconductor devices controlled by the loadpath voltage is implemented as a transistor of a second conduction typecomplementary to the first conduction type.
 2. The circuit arrangementof claim 1, further comprising: a drive circuit configured to providethe drive voltage.
 3. The circuit arrangement of claim 2, wherein theone of the plurality of semiconductor devices actively controlled by thedrive voltage comprises a control node and is arranged to receive adrive signal from the drive circuit at the control node.
 4. The circuitarrangement of claim 1, wherein each of the remaining ones of theplurality of semiconductor devices controlled by the load path voltagecomprises a control node and a first load node and is arranged toreceive the load path voltage between the control node and the firstload node.
 5. The circuit arrangement of claim 1, wherein the transistorof the first conduction type is a MOSFET; and wherein each transistor ofthe second conduction type is selected from the group consisting of: adepletion MOSFET; an HEMT; a nanotube; and a JFET.
 6. The circuitarrangement of claim 1, wherein the transistor of the first conductiontype has a threshold voltage of substantially 0V.
 7. The circuitarrangement of claim 1, wherein the one of the plurality of transistordevices actively controlled by the drive voltage is configured toreceive a load-path voltage of at least one of the remaining ones of theplurality of semiconductor devices as a drive voltage.
 8. The circuitarrangement of claim 1, further comprising: a resistor connected betweenthe one of the plurality of semiconductor devices actively controlled bythe drive voltage and a series circuit comprising the remaining ones ofthe plurality of semiconductor devices controlled by the load pathvoltage.
 9. The circuit arrangement of claim 1, further comprising: atransistor connected between the one of the plurality of semiconductordevices actively controlled by the drive voltage and a series circuitcomprising the remaining ones of the plurality of semiconductor devicescontrolled by the load path voltage.
 10. The circuit arrangement ofclaim 9, wherein the transistor is configured to receive a load-pathvoltage of the one of the plurality of semiconductor devices activelycontrolled by the drive voltage as a drive voltage, and wherein the oneof the plurality of semiconductor devices actively controlled by thedrive voltage is configured to receive the load-path voltage of thetransistor as a drive voltage.
 11. The circuit arrangement of claim 1,further comprising: a voltage divider circuit connected between thefirst load terminal and the second load terminal, and configured todrive the one of the plurality of semiconductor devices activelycontrolled by the drive voltage.
 12. The circuit arrangement of claim11, wherein the voltage divider circuit comprises: a rectifier element;and a plurality of additional semiconductor devices connected in serieswith the rectifier element, wherein each of the additional semiconductordevices is configured to receive a load-path voltage of at least one ofthe additional semiconductor devices or the rectifier element as a drivevoltage.
 13. The circuit arrangement of claim 12, wherein the additionalsemiconductor devices are selected from the group consisting of: adepletion MOSFET; an enhancement MOSFET; an HEMT; a nanotube; and aJFET.
 14. The circuit arrangement of claim 1, wherein the circuitarrangement is implemented as a power converter circuit having atopology selected from the group consisting of: a buck convertertopology; a boost converter topology; a flyback converter topology; aTTF topology; a phase-shift ZVS topology; and an LLC resonant convertertopology.
 15. The circuit arrangement of claim 1, wherein${{FOM}_{SR} = \frac{{R_{ON}\lbrack{mOhm}\rbrack} \cdot {\left( {Q_{RR} \cdot Q_{OSS}} \right)\lbrack{nC}\rbrack}}{\left( V_{BR} \right)^{1.5}}},$wherein FOM_(SR) is below 3, wherein R_(ON) is on-resistance, whereinQ_(RR) is bipolar charge, wherein Q_(OSS) is output charge, whereinV_(BR) is voltage blocking capability.
 16. A method in a circuitarrangement having a plurality of semiconductor devices connected inseries between load terminals of a rectifier circuit, the methodcomprising: actively controlling one of the plurality of semiconductordevices by a drive voltage; and controlling each remaining one of theplurality of semiconductor devices by a load path voltage of at leastone other semiconductor device of the plurality of semiconductordevices; wherein the one of the plurality of semiconductor devicesactively controlled by the drive voltage is implemented as a transistorof a first conduction type, and wherein each of the remaining ones ofthe plurality of semiconductor devices controlled by the load pathvoltage is implemented as a transistor of a second conduction typecomplementary to the first conduction type.
 17. The method of claim 16,further comprising: providing the drive voltage by a drive circuit. 18.The method of claim 16, wherein actively controlling one of theplurality of semiconductor devices by a drive voltage comprisesreceiving the drive voltage at a control node of that semiconductordevice.
 19. The method of claim 16, wherein controlling each remainingone of the plurality of semiconductor devices by a load path voltage ofat least one other semiconductor device of the plurality ofsemiconductor devices comprises receiving the load path voltage betweena control node and a first load node of each remaining one of theplurality of semiconductor devices.
 20. A circuit arrangement,comprising: a plurality of semiconductor devices connected in seriesbetween load terminals of a rectifier circuit, wherein the plurality ofsemiconductor devices are arranged such that one of the plurality ofsemiconductor devices is actively controlled by a drive voltage and eachremaining one of the plurality of semiconductor devices is controlled bya load path voltage of at least one other semiconductor device of theplurality of semiconductor devices; wherein the one of the plurality oftransistor devices actively controlled by the drive voltage isimplemented as a normally-on transistor, and wherein each of theremaining ones of the plurality of semiconductor devices controlled bythe load path voltage is implemented as a normally-off transistor.